ESMT
DC CHARACTERISTICS
Recommended operating condition unless otherwise noted，T
A
= -40 to 85
°
C
Parameter
Operating Current
(One Bank Active)
Precharge Standby Current
in power-down mode
Symbol
I
CC1
I
CC2P
I
CC2PS
I
CC2N
I
CC2NS
Active Standby Current
in power-down mode
I
CC3P
I
CC3PS
I
CC3N
Test Condition
CAS
Latency
M12L2561616A
Operation Temperature Condition -40~85°C
Version
-6
170
4
4
50
-7
150
Unit
mA
mA
Note
1,2
Burst Length = 2, t
RC
= t
RC(min)
, I
OL
= 0 mA
CKE = V
IL
(max), tcc = 10ns
CKE & CLK=V
IL
(max), t
CC
=
∞
CKE=V
IH(min)
, CS = V
IH(min)
, t
CC
= 10ns
Input signals are changed one time during 2t
ck
CKE=V
IH(min)
, CLK=V
IL
(max), tcc =
∞
input signals are stable
CKE=V
IL
(max), t
CC
=10ns
CKE & CLK=V
IL
(max), t
CC
=
∞
CKE
≥
V
IH
(min), CS
≥
V
IH(min)
, t
CC
= 15ns
Input signals are changed one time during 2clks
All other pins
≥
V
DD
-0.2V or
≤
0.2V
CKE=V
IH(min)
, CLK=V
IL
(max), t
CC
=
∞
input signals are stable
I
OL
= 0 mA, Page Burst, 4 Banks activated,
t
CCD
= 2 CLKs
t
RFC
≥
t
RFC(min)
CKE=0.2V
Precharge Standby Current
in non power-down mode
mA
30
20
20
55
mA
mA
Active Standby Current
in non power-down mode
(One Bank Active)
Operating Current
(Burst Mode)
Refresh Current
Self Refresh Current
Note :
I
CC3NS
I
CC4
I
CC5
I
CC6
45
210
210
5
180
180
mA
mA
mA
mA
1,2
1. Measured with outputs open.
2. Input signals are changed one time during 2 CLKS.
Elite Semiconductor Memory Technology Inc.
Publication Date: May 2008
Revision: 1.2
4/45
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
