ESMT
M12L2561616A (2K)
Operation Temperature Condition -40°C~85°C
CLK
COMMANDS
H
CKE
Mode register set command
CS
RAS
( CS ,RAS , CAS , WE = Low)
CAS
The M12L2561616A has a mode register that defines how the device operates.
In this command, A0~A12, BA0 and BA1 are the data input pins. After power on, the
mode register set command must be executed to initialize the device.
The mode register can be set only when all banks are in idle state.
During 2CLK following this command, the M12L2561616A cannot accept any
other commands.
WE
BA0, BA1
A10
Add
Fig. 1 Mode register set
command
CLK
Activate command
H
CKE
CS
( CS ,RAS = Low, CAS , WE = High)
RAS
The M12L2561616A has four banks, each with 8,192 rows.
This command activates the bank selected by BA1 and BA0 (BS) and a row
address selected by A0 through A12.
CAS
WE
This command corresponds to a conventional DRAM’s RAS falling.
BA0, BA1
(Bank select)
A10
Row
Row
Add
Fig. 2 Row address strobe and
bank active command
Precharge command
CLK
H
( CS ,RAS , WE = Low, CAS = High )
CKE
CS
This command begins precharge operation of the bank selected by BA1 and BA0
(BS). When A10 is High, all banks are precharged, regardless of BA1 and BA0.
When A10 is Low, only the bank selected by BA1 and BA0 is precharged.
After this command, the M12L2561616A can’t accept the activate command to
the precharging bank during tRP (precharge to activate command period).
RAS
CAS
This command corresponds to a conventional DRAM’s RAS rising.
WE
BA0, BA1
(Bank select)
A10
(Precharge select)
Add
Fig. 3 Precharge command
Elite Semiconductor Memory Technology Inc.
Publication Date: Jun. 2012
Revision: 1.4
13/45
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
