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M12L2561616A-6TG2S 参数 Datasheet PDF下载

M12L2561616A-6TG2S图片预览
型号: M12L2561616A-6TG2S
PDF下载: 下载PDF文件 查看货源
内容描述: [暂无描述]
分类和应用: 存储内存集成电路光电二极管动态存储器
文件页数/大小: 45 页 / 933 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT  
M12L2561616A (2K)  
CLK  
Self refresh entry command  
CKE  
( CS ,RAS , CAS , CKE = Low , WE = High)  
CS  
RAS  
CAS  
After the command execution, self refresh operation continues while CKE  
remains low. When CKE goes to high, the M12L2561616A exits the self refresh  
mode.  
During self refresh mode, refresh interval and refresh operation are performed  
internally, so there is no need for external control.  
WE  
Before executing self refresh, all banks must be precharged.  
BA0, BA1  
(Bank select)  
A10  
Add  
Fig. 7 Self refresh entry  
command  
CLK  
Burst stop command  
H
CKE  
( CS , WE = Low, RAS , CAS = High)  
CS  
RAS  
CAS  
This command terminates the current burst operation.  
Burst stop is valid at every burst length.  
WE  
BA0, BA1  
(Bank select)  
A10  
Add  
Fig. 8 Burst stop command  
CLK  
No operation  
CKE  
CS  
H
( CS = Low, RAS , CAS , WE = High)  
This command is not an execution command. No operations begin or terminate  
by this command.  
RAS  
CAS  
WE  
BA0, BA1  
(Bank select)  
A10  
Add  
Fig. 9 No operation  
Elite Semiconductor Memory Technology Inc.  
Publication Date: Jun. 2012  
Revision: 1.4 15/45