ESMT
DC CHARACTERISTICS
Recommended operating condition unless otherwise noted，T
A
= 0 to 70
°
C
Parameter
Operating Current
(One Bank Active)
Symbol
Test Condition
M12L2561616A (2K)
Version
-5
-6
80
3
3
15
5
8
8
-7
70
Unit Note
I
CC1
Burst Length = 2, t
RC
= t
RC
(min), I
OL
= 0 mA
CKE = V
IL
(max), t
CC
= 10ns
CKE & CLK=V
IL
(max), t
CC
=
∞
CKE=V
IH
(min), CS = V
IH
(min), t
CC
= 10ns
Input signals are changed one time during 2CLK
CKE=V
IH
(min), CLK=V
IL
(max), t
CC
=
∞
input signals are stable
CKE=V
IL
(max), t
CC
=10ns
CKE & CLK=V
IL
(max), t
CC
=
∞
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
= 15ns
90
mA
mA
mA
mA
mA
mA
mA
1,2
Precharge Standby
I
CC2P
Current in power-down
mode
I
CC2PS
Precharge Standby
Current in non
power-down mode
I
CC2N
I
CC2NS
Active Standby
I
CC3P
Current in power-down
I
CC3PS
mode
Active Standby
Current in non
power-down mode
(One Bank Active)
I
CC3N
Input signals are changed one time during 2 CLKs
All other pins
≥
V
DD
-0.2V or
≤
0.2V
CKE=V
IH
(min), CLK=V
IL
(max), t
CC
=
∞
input signals are stable
I
OL
= 0 mA, Page Burst, 4 Banks activated,
t
CCD
= 2 CLKs
t
RFC
≥
t
RFC
(min)
CKE=0.2V
110
150
28
mA
I
CC3NS
I
CC4
I
CC5
I
CC6
20
100
140
5
90
130
mA
mA
mA
mA
1,2
Operating Current
(Burst Mode)
Refresh Current
Self Refresh Current
Note: 1. Measured with outputs open.
2. Input signals are changed one time during 2 CLKs.
Elite Semiconductor Memory Technology Inc.
Publication Date: Jun. 2012
Revision: 1.4
4/45
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
