ESMT
DC CHARACTERISTICS
M12L16161A
(Recommended operating condition unless otherwise noted, T
A
= 0 to 70
°C
V
IH
(min)/V
IL
(max)=2.0V/0.8V)
Parameter
Operating Current
(One Bank Active)
Precharge Standby
Current in power-down
mode
Precharge Standby
Current in non
power-down mode
Symbol
Test Condition
CAS
Latency
Version
-5
130
2
2
25
mA
-7
100
Unit Note
mA
mA
1
I
CC1
I
CC2P
I
CC2PS
I
CC2N
Burst Length = 1
t
RC
≥
t
RC
(min), t
CC
≥
t
CC
(min), I
OL
= 0mA
CKE
≤
V
IL
(max), t
CC
=15ns
CKE
≤
V
IL
(max), CLK
≤
V
IL
(max), t
CC
=
∞
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
=15ns
Input signals are changed one time during 30ns
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
CKE
≤
V
IL
(max), t
CC
=15ns
CKE
≤
V
IL
(max), CLK
≤
V
IL
(max), t
CC
=
∞
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
=15ns
Input signals are changed one time during 30ns
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
I
OL
= 0Ma, Page Burst
All Band Activated, t
CCD
= t
CCD
(min)
t
RC
≥
t
RC
(min)
CKE
≤
0.2V
3
2
I
CC2NS
Active Standby Current
in power-down mode
Active Standby Current
in non power-down
mode
(One Bank Active)
Operating Current
(Burst Mode)
Refresh Current
Self Refresh Current
I
CC3P
I
CC3PS
I
CC3N
I
CC3NS
I
CC4
10
10
10
25
10
150
150
150
1
120
120
120
mA
mA
mA
mA
mA
1
I
CC5
I
CC6
mA
mA
2
Note:
1.Measured with outputs open. Addresses are changed only one time during t
CC
(min).
2.Refresh period is 32ms. Addresses are changed only one time during t
CC
(min).
Elite Semiconductor Memory Technology Inc.
Publication Date
:
Sep. 2008
Revision
:
2.7
4/29
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
