ESMT
DC CHARACTERISTICS
Recommended operating condition unless otherwise noted，T
A
= 0 to 70
°
C
Parameter
Operating Current
(One Bank Active)
Precharge Standby Current
in power-down mode
Symbol
I
CC1
I
CC2P
I
CC2PS
I
CC2N
I
CC2NS
Active Standby Current
in power-down mode
I
CC3P
I
CC3PS
Test Condition
M12L128168A
Version
-5
-6
160
2
2
45
-7
140
Unit
mA
mA
Note
1,2
Burst Length = 1, t
RC
≥
t
RC(min)
, I
OL
= 0 mA
CKE
≤
V
IL
(max), tcc = t
CK(MIN)
CKE & CLK
≤
V
IL
(max), t
CC
=
∞
CKE
≥
V
IH(min)
, CS
≥
V
IH(min)
, t
CC
= t
CK(MIN)
Input signals are changed one time during 2t
ck
CKE
≥
V
IH(min)
, CLK
≤
V
IL
(max), tcc =
∞
input signals are stable
CKE
≤
V
IL
(max), t
CC
= t
CK(MIN)
CKE & CLK
≤
V
IL
(max), t
CC
=
∞
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
=15ns
170
Precharge Standby Current
in non power-down mode
mA
25
6
6
mA
55
mA
Active Standby Current
in non power-down mode
(One Bank Active)
I
CC3N
Input signals are changed one time during 2clks
All other pins
≥
V
DD
-0.2V or
≤
0.2V
I
CC3NS
Operating Current
(Burst Mode)
Refresh Current
Self Refresh Current
Note :
I
CC4
I
CC5
I
CC6
CKE
≥
V
IH(min)
, CLK
≤
V
IL
(max), t
CC
=
∞
input signals are stable
I
OL
= 0 mA, Page Burst, 2 Banks activated
t
RC
≥
t
RC(min)
CKE
≤
0.2V
280
280
35
210
210
2
180
180
mA
mA
mA
mA
1,2
1. Measured with outputs open.
2. Input signals are changed one time during 2 CLKS.
Elite Semiconductor Memory Technology Inc.
Publication Date: Mar. 2009
Revision: 2.3
4/45
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
