ESMT
M12L128168A
DC CHARACTERISTICS
Recommended operating condition unless otherwise noted，TA = 0 to 70 °C
Version
CAS
Parameter
Symbol
Test Condition
Unit Note
Latency
-5
-6
-7
Operating Current
(One Bank Active)
ICC1
Burst Length = 1, tRC ≥ tRC(min), IOL = 0 mA
CKE ≤ VIL(max), tcc = tCK(MIN)
170 160 140
2
mA
mA
1,2
ICC2P
Precharge Standby Current
in power-down mode
ICC2PS
ICC2N
2
CKE & CLK ≤ VIL (max), tCC = ∞
CKE ≥ VIH(min), CS ≥ VIH(min), tCC = tCK(MIN)
Input signals are changed one time during 2tck
45
Precharge Standby Current
in non power-down mode
mA
CKE ≥ VIH(min), CLK ≤ VIL(max), tcc = ∞
ICC2NS
25
input signals are stable
ICC3P
6
6
CKE ≤ VIL(max), tCC = tCK(MIN)
Active Standby Current
in power-down mode
mA
mA
ICC3PS
CKE & CLK ≤ VIL(max), tCC = ∞
CKE ≥ VIH(min), CS ≥ VIH(min), tCC = tCK(MIN)
Input signals are changed one time during 2tCK
55
ICC3N
Active Standby Current
in non power-down mode
(One Bank Active)
CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞
ICC3NS
35
mA
mA
input signals are stable
Operating Current
(Burst Mode)
ICC4
ICC5
ICC6
IOL = 0 mA, Page Burst, 2 Banks activated
1,2
280 210 180
Refresh Current
280 210 180
2
mA
mA
t
RC ≥ tRC(min)
Self Refresh Current
CKE ≤ 0.2V
Note : 1. Measured with outputs open.
2. Input signals are changed one time during 2 CLKS.
Elite Semiconductor Memory Technology Inc.
Publication Date: Oct. 2006
Revision: 2.0 4/43
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
