EliteMT
M11B416256A
CBR REFRESH CYCLE
(A0~A8 ; OE = DON’T CARE)
tR P
tR A S
tR P
tR A S
V I H
V I L
RA S
tR P C
tC P
tC S R
tC S R
tC H R
tR P C
tC H R
V I H
V I L
CA SL , C AS H
I/O
OPE N
tR C H
V I H
V I L
W E
HIDDEN REFRESH CYCLE
( WE = HIGH ; OE = LOW)
( R E A D )
tR A S
( R E F R E S H )
tR A S
tR P
V I H
V I L
RA S
tC R P
tR C D
tC H R
tR S H
V I H
V I L
CA SL , C AS H
tA R
tR A L
tC A H
tR A D
tR A H
tA S R
tA S C
V I H
V I L
R O W
C O L U M N
t A A
tR A C
A D D R
NO TE 1
tO F F 1
tC A C
tC L Z
VO H
VO L
VAL ID D AT A
OPE N
OPE N
I/O
OE
tO F F 2
tO A C
tO R D
V I H
V I L
D O N ' T C A R E
U N D E F I N E D
Note : 1. tOFF1 is reference from the rising edge of RAS or CAS , whichever occurs last.
Elite Memory Technology Inc
Publication Date : Feb. 2004
Revision : 1.9
12/15
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
