EliteMT
M11B416256A
EDO-PAGE-MODE EARLY-WRITE CYCLE
tR A S C
tR P
V I H
RAS
V I L
tC S H
tP C ( N O T E 1 )
tR S H
tC A S , tC L C H
tC A S , tC L C H
tC A S , tC L C H
tC P
tC R P
tR C D
tC P
tC P
V I H
CA SL , C AS H
V I L
tA R
tR A L
tC A H
tR A D
tR A H
tA S R
tC A H
C O L U M N
tA S C
tA S C
tA S C
tC A H
V I H
V I L
C O L U M N
A D D R
R O W
R O W
C O L U M N
tC W L
tW C S
tC W L
tW C H
t W P
tC W L
tW C H
tW P
tW C S
tW C S
tW C H
t W P
V I H
W E
V I L
tW C R
tD H R
tD H
tR W L
tD H
tD S
tD S
tD H
tD S
V I H
I/O
VAL I D D AT A
VAL I D D AT A
VAL I D D AT A
V I L
V I H
OE
V I L
EDO-PAGE-MODE READ-WRITE CYCLE
(LATE WRITE and READ-MODIFY-WRITE CYCLES)
tR A S C
tR P
tC P
V I H
RA S
V I L
tR S H
tC A S , tC L C H
tC S H
tP C M
tC A S , tC L C H
tC A S , tC L C H
tC P
tC R P
tR C D
tC P
V I H
V I L
CA SL , C AS H
tA R
tR A D
tR A H
tR A L
tC A H
tA S C
tC A H
tA S R
tA S C
tA S C
tC A H
V I H
V I L
A D D R
R O W
C O L U M N
C O L U M N
C O L U M N
R O W
tR W L
tR W D
tR C S
tC W L
t W P
tC W L
t W P
tC W L
t W P
tA W D
tC W D
tA W D
tC W D
tA W D
tC W D
V I H
V I L
W E
t A A
t A A
t A A
tR A C
tD H
tD S
tD H
tA C P
tD H
tA C P
tD S
tD S
tC A C
tC L Z
tC A C
tC L Z
tC A C
tC L Z
V I / O H
V A L I D
V A L I D
V A L I D V A L I D
V A L I D V A L I D
O U T I N
I/O
OE
D
O U T
D
I
N
D
O
U
T
D
I
N
D
D
V I / O L
tO F F 2
tO F F 2
tO F F 2
tO E H
tO A C
tO A C
tO A C
V I H
V I L
DON'T CARE
UNDEFINED
Note : 1. tPC can be measured from falling edge to falling edge of CAS , or from rising edge to rising edge of CAS . Both
measurements must meet the tPC specification.
Elite Memory Technology Inc
Publication Date : Feb. 2004
Revision : 1.9 10/15
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
