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F49L800UA-70TIG 参数 Datasheet PDF下载

F49L800UA-70TIG图片预览
型号: F49L800UA-70TIG
PDF下载: 下载PDF文件 查看货源
内容描述: 8兆位( 1M ×8 / 512K ×16 ) 3V只有CMOS闪存 [8 Mbit (1M x 8/512K x 16) 3V Only CMOS Flash Memory]
分类和应用: 闪存存储内存集成电路光电二极管
文件页数/大小: 47 页 / 468 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT  
F49L800UA/F49L800BA  
Operation Temperature Condition -40°C~85°C  
10.1 Read Operation  
TA = -40°C to 85°C, VCC = 2.7V~3.6V  
Table 10. Read Operations  
-70  
-90  
Symbol  
Description  
Conditions  
Unit  
Min.  
Max.  
Min.  
Max.  
tRC  
Read Cycle Time (Note 1)  
Address to Output Delay  
70  
90  
ns  
ns  
tACC  
=
= VIL  
70  
70  
30  
90  
90  
35  
CE OE  
to Output Delay  
CE  
tCE  
tOE  
= VIL  
ns  
ns  
OE  
CE  
= VIL  
= VIL  
to Output Delay  
OE  
High to Output Float  
(Note1)  
OE  
tDF  
25  
30  
ns  
ns  
ns  
ns  
CE  
Output Enable  
Read  
0
10  
0
0
10  
0
tOEH  
Toggle and  
Data Polling  
Hold Time  
=
CE OE  
= VIL  
tOH  
Address to Output hold  
Notes :  
1. Not 100% tested.  
2. tDF is defined as the time at which the output achieves the open circuit condition and data is no longer  
driven.  
Figure 5. Read Timing Waveform  
tR C  
Addresses Stabl e  
tA C C  
Addr es s  
C E  
tD F  
t O E  
OE  
tO E H  
W E  
tC E  
tO H  
H i gh - Z  
H i gh - Z  
Output Vali d  
Outputs  
RE S E T  
RY/B Y  
0V  
Elite Semiconductor Memory Technology Inc.  
Publication Date : Jan. 2008  
Revision: 1.2 21/47  
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