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F49L800BA-90TG 参数 Datasheet PDF下载

F49L800BA-90TG图片预览
型号: F49L800BA-90TG
PDF下载: 下载PDF文件 查看货源
内容描述: 8兆位( 1M ×8 / 512K ×16 ) 3V只有CMOS闪存 [8 Mbit (1M x 8/512K x 16) 3V Only CMOS Flash Memory]
分类和应用: 闪存
文件页数/大小: 47 页 / 459 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT  
F49L800UA/F49L800BA  
The system may also write the auto-select command  
sequence when the device is in the Erase Suspend  
mode. The device allows reading auto-select codes  
even at addresses within erasing sectors, since the  
codes are not stored in the memory array. When the  
device exits the auto-select mode, the device reverts to  
the Erase Suspend mode, and is ready for another  
valid operation.  
Table 6 shows the address and data requirements.  
This method is an alternative to that shown in Table 4,  
which is intended for PROM programmers and requires  
V
ID  
on address bit A9.  
The auto-select command sequence is initiated by  
writing two unlock cycles, followed by the auto-select  
command. The device then enters the auto-select  
mode, and the system may read at any address any  
number of times, without initiating another command  
sequence. The read cycles at address 04H, 08H, 0CH,  
and 00H retrieves the ESMT manufacturer ID. A read  
cycle at address 01H retrieves the device ID. A read  
cycle containing a sector address (SA) and the  
address 02H returns 01H if that sector is protected, or  
00H if it is unprotected. Refer to Tables 1 and 2 for  
valid sector addresses.  
The system must write the Erase Resume command  
(address bits are “don’t care” as shown in Table 5) to  
exit the erase suspend mode and continue the sector  
erase operation. Further writes of the Resume  
command are ignored. Another Erase Suspend  
command can be written after the device has resumed  
erasing.  
Auto-select Command  
The system must write the reset command to exit the  
auto-select mode and return to reading array data.  
The auto-select command sequence allows the host  
system to access the manufacturer and devices codes,  
and determine whether or not a sector is protected.  
7.3 Write Operation Status  
The device provides several bits to determine the  
describe the functions of these bits. RY/  
, DQ7, and  
BY  
status of a write operation: RY/  
DQ3, DQ2, and. Table 7 and the following subsections  
, DQ7, DQ6, DQ5,  
DQ6 each offer a method for determining whether a  
program or erase operation is complete or in progress.  
BY  
Table 7. Write Operation Status  
DQ7  
DQ5  
(Note2)  
Status  
DQ6  
DQ3 DQ2  
RY/  
BY  
(Note1)  
No  
N/A  
Embedded Program Algorithm  
Embedded Erase Algorithm  
Toggle  
Toggle  
0
0
0
0
DQ7  
0
Toggle  
1
Toggle  
0
1
Reading Erase Suspended  
Sector  
No  
Toggle  
In Progress  
1
N/A Toggle  
Reading Non-Erase  
Suspended Sector  
Erase Suspended Mode  
Data  
DQ7  
DQ7  
Data  
Data Data Data  
1
0
0
Erase Suspend Program  
Toggle  
Toggle  
0
1
N/A  
N/A  
N/A  
No  
Toggle  
Embedded Program Algorithm  
Exceeded  
Time Limits  
Embedded Erase Algorithm  
Erase Suspend Program  
0
Toggle  
Toggle  
1
1
1
Toggle  
N/A  
0
0
N/A  
DQ7  
Notes:  
1. DQ7 and DQ2 require a valid address when reading status information. Refer to the appropriate subsection for  
further details.  
2. DQ5 switches to ‘1’ when an Embedded Program or Embedded Erase operation has exceeded the maximum  
timing limits. See “DQ5: Exceeded Timing Limits” for more information.  
Elite Semiconductor Memory Technology Inc.  
Publication Date : Jan. 2008  
Revision: 1.6 14/47