ESMT
F49L800UA/F49L800BA
11. ERASE AND PROGRAMMING PERFORMANCE
Table 15. Erase And Programming Performance (Note.1)
Limits
Parameter
Unit
Typ.(2)
Max.(3)
Sector Erase Time
Chip Erase Time
0.7
15
Sec
Sec
14
Byte Programming Time
Word Programming Time
9
11
300
360
27
17
-
Us
Us
Byte Mode
Word Mode
9
Sec
Chip Programming Time
5.8
Sec
Erase/Program Cycles (1)
Data Retention
100,000
20
Cycles
Years
-
Notes:
1.Not 100% Tested, Excludes external system level over head.
2.Typical values measured at 25°C, 3.3V.
3.Maximum values measured at 85°C, 2.7V.
Elite Semiconductor Memory Technology Inc.
Publication Date : Jan. 2008
Revision: 1.6
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