EFST
F49L400UA/F49L400BA
11. ERASE AND PROGRAMMING PERFORMANCE
Table 15. Erase And Programming Performance (Note.1)
Limits
Parameter
Unit
Typ.(2)
Max.(3)
15
Sector Erase Time
Chip Erase Time
0.7
Sec
Sec
Us
11
50
Byte Programming Time
Word Programming Time
9
11
300
360
13.5
9
Us
Byte Mode
Word Mode
4.5
Sec
Sec
Cycles
Chip Programming Time
Erase/Program Cycles (1)
Notes:
3
100,000
-
1.Not 100% Tested, Excludes external system level over head.
2.Typical values measured at 25°C, 3.3V.
3.Maximum values measured at 85°C, 3.0V.
Elite Flash Storage Technology Inc.
Publication Date : Sep. 2006
Revision: 1.1
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