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F49L004UA-70N 参数 Datasheet PDF下载

F49L004UA-70N图片预览
型号: F49L004UA-70N
PDF下载: 下载PDF文件 查看货源
内容描述: 4兆位( 512K ×8 )只有3V CMOS闪存 [4 Mbit (512K x 8) 3V Only CMOS Flash Memory]
分类和应用: 闪存
文件页数/大小: 46 页 / 354 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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EFST  
preliminary  
F49L004UA / F49L004BA  
10.4 TEMPORARY SECTOR UNPROTECT Operation  
Table 14. Temporary Sector Unprotect  
Symbol  
Description  
VID Rise and Fall Time (See Note)  
All Speed Options  
Unit  
Min  
Min  
500  
ns  
TVIDR  
Setup Time for Temporary Sector  
RESET  
4
us  
TRSP  
Unprotect  
Notes:  
Not 100% tested  
Figure 24. Temporary Sector Unprotect Timing Diagram  
0 or VC C  
t V I D R  
0 or VC C  
RE S E T  
C E  
t V I D R  
P r o g r a m o r E r a s e C o m m a n d S e q u e n c e  
W E  
tR S P  
RY/B Y  
Figure 25. Q6 vs Q2 for Erase and Erase Suspend Operations  
Ente r E r as e  
Suspend Pro gra m  
En ter E m bedde d  
Er as in g  
Er as e  
Suspen d  
Er as e  
Resu m e  
W E  
DQ6  
DQ 2  
Er as e  
Co m pl e t e  
Er as e  
Su spend  
Read  
Er as e  
Su spend  
Pr o gr a m  
Er as e  
Notes :  
The system can use OE or CE to toggle DQ2 / DQ6, DQ2 toggles only when read at an address within an  
erase-suspended.  
Elite Flash Storage Technology Inc.  
Publication Date : Aug. 2003  
Revision: 0.2 41/46  
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