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F49B002UA-70N 参数 Datasheet PDF下载

F49B002UA-70N图片预览
型号: F49B002UA-70N
PDF下载: 下载PDF文件 查看货源
内容描述: 2兆位( 256K ×8 )只有5V CMOS闪存 [2 Mbit (256K x 8) 5V Only CMOS Flash Memory]
分类和应用: 闪存
文件页数/大小: 33 页 / 488 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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EFST  
F49B002UA  
7.4 More Device Operations  
Hardware Data Protection  
Logical Inhibit  
The command sequence requirement of unlock cycles  
for programming or erasing provides data protection  
against inadvertent writes. In addition, the following  
hardware data protection measures prevent accidental  
erasure or programming, which might otherwise be  
Write cycles are inhibited by holding any one of  
=
OE  
V ,  
IL  
= V or  
= V . To initiate a write cycle,  
WE  
CE  
IH  
IH  
and  
must be a logical zero while  
is a  
OE  
WE  
CE  
logical one.  
caused by spurious system level signals during V  
CC  
power-up and power-down transitions, or from system  
noise.  
Power Supply Decoupling  
In order to reduce power switching effect, each device  
should have a 0.1uF ceramic capacitor connected  
between  
Low VCC Write Inhibit  
its V  
and GND.  
CC  
When V  
is less than VLKO, the device does not  
CC  
accept any write cycles. This protects data during V  
CC  
power-up and power-down. The command register and  
all internal program/erase circuits are disabled, and the  
Power-Up Sequence  
device resets. Subsequent writes are ignored until V  
CC  
The device powers up in the Read Mode. In addition,  
the memory contents may only be altered after  
successful completion of the predefined command  
sequences.  
is greater than V . The system must provide the  
LKO  
proper signals to the control pins to prevent  
unintentional writes when V  
is greater than V  
.
CC  
LKO  
Power-Up Write Inhibit  
Write Pulse "Glitch" Protection  
Noise pulses of less than 15 ns (typical) on  
or  
If  
=
= V and  
= V during power up,  
OE  
IH  
WE  
the device does not accept commands on the rising  
edge of The internal state machine is  
CE  
CE  
IL  
do not initiate a write cycle.  
WE  
.
WE  
automatically reset to reading array data on power-up.  
Elite Flash Storage Technology Inc.  
Publication Date : Sep. 2006  
Revision: 1.4  
10/33