ESMT
F25S004A
ERASE AND PROGRAMMING PERFORMANCE
Limits
Unit
Parameter
Symbol
Typ.(2)
Max.(3)
Sector Erase Time
TSE
TBE
TCE
TBP
90
200
2
ms
Block Erase Time
1
s
s
Chip Erase Time
4
7
30
300
100
-
Byte Programming Time
Chip Programming Time
Erase/Program Cycles (1)
Data Retention
us
12
s
100,000
20
Cycles
Years
-
Notes:
1.Not 100% Tested, Excludes external system level over head.
2.Typical values measured at 25°C, 2.5V.
3.Maximum values measured at 85°C, 2.3V.
Elite Semiconductor Memory Technology Inc.
Publication Date: Jan. 2009
Revision: 1.1 25/33