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F25S004A-50PAG 参数 Datasheet PDF下载

F25S004A-50PAG图片预览
型号: F25S004A-50PAG
PDF下载: 下载PDF文件 查看货源
内容描述: 2.5V只有4兆位串行闪存 [2.5V Only 4 Mbit Serial Flash Memory]
分类和应用: 闪存
文件页数/大小: 33 页 / 485 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT  
F25S004A  
Chip-Erase  
The Chip-Erase instruction clears all bits in the device to FFH. A  
Chip-Erase instruction will be ignored if any of the memory area  
is protected. Prior to any Write operation, the Write-Enable  
60H or C7H. CE must be driven high before the instruction is  
executed. The user may poll the Busy bit in the software status  
register or wait TCE for the completion of the internal self-timed  
Chip-Erase cycle.  
(WREN) instruction must be executed. CE must remain active  
low for the duration of the Chip-Erase instruction sequence. The  
Chip-Erase instruction is initiated by executing an 8-bit command,  
See Figure 11 for the Chip-Erase sequence.  
CE  
0 1 2 3 4 5 6 7  
MODE3  
SCK  
SI  
MODE0  
60 or C7  
MSB  
HIGH IMPENANCE  
SO  
FIGURE 11 : CHIP-ERASE SEQUENCE  
Read-Status-Register (RDSR)  
The Read-Status-Register (RDSR) instruction allows reading of  
the status register. The status register may be read at any time  
even during a Write (Program/Erase) operation.  
When a Write operation is in progress, the Busy bit may be  
checked before sending any new commands to assure that the  
new commands are properly received by the device.  
and remain low until the status data is read.  
Read-Status-Register is continuous with ongoing clock cycles  
until it is terminated by a low to high transition of the CE  
See Figure 12 for the RDSR instruction sequence.  
CE must be driven low before the RDSR instruction is entered  
CE  
MODE3  
0
1
2
3
4
5
6
7
8
9
10  
11  
12  
13  
14  
SCK MODE1  
05  
SI  
MSB  
HIGH IMPENANCE  
SO  
Bit7 Bit6 Bit5 Bit4 Bit3 Bit2 Bit1 Bit0  
MSB  
Status  
Register Out  
Figure12 : READ-STATUS-REGISTER (RDSR) SEQUENCE  
Elite Semiconductor Memory Technology Inc.  
Publication Date: Jan. 2009  
Revision: 1.1 17/33  
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