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F25S004A-50DG 参数 Datasheet PDF下载

F25S004A-50DG图片预览
型号: F25S004A-50DG
PDF下载: 下载PDF文件 查看货源
内容描述: 2.5V只有4兆位串行闪存 [2.5V Only 4 Mbit Serial Flash Memory]
分类和应用: 闪存
文件页数/大小: 33 页 / 485 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT  
F25S004A  
Write-Enable (WREN)  
The Write-Enable (WREN) instruction sets the Write-  
Enable-Latch bit to 1 allowing Write operations to occur.  
The WREN instruction must be executed prior to any Write  
(Program/Erase) operation. CE must be driven high before the  
WREN instruction is executed.  
CE  
0 1 2 3 4 5 6 7  
MODE3  
MODE0  
SCK  
SI  
06  
MSB  
HIGH IMPENANCE  
SO  
FIGURE 13 : WRITE ENABLE (WREN) SEQUENCE  
Write-Disable (WRDI)  
The Write-Disable (WRDI) instruction resets the Write-Enable-Latch  
bit and AAI bit to 0 disabling any new Write operations from occurring.  
CE must be driven high before the WRDI instruction is executed.  
CE  
0 1 2 3 4 5 6 7  
MODE3  
MODE0  
SCK  
SI  
04  
MSB  
HIGH IMPENANCE  
SO  
Figure 14 : WRITE DISABLE (WRDI) SEQUENCE  
Elite Semiconductor Memory Technology Inc.  
Publication Date: Jan. 2009  
Revision: 1.1  
18/33  
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