欢迎访问ic37.com |
会员登录 免费注册
发布采购

F25S004A-50DG 参数 Datasheet PDF下载

F25S004A-50DG图片预览
型号: F25S004A-50DG
PDF下载: 下载PDF文件 查看货源
内容描述: 2.5V只有4兆位串行闪存 [2.5V Only 4 Mbit Serial Flash Memory]
分类和应用: 闪存
文件页数/大小: 33 页 / 485 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
 浏览型号F25S004A-50DG的Datasheet PDF文件第7页浏览型号F25S004A-50DG的Datasheet PDF文件第8页浏览型号F25S004A-50DG的Datasheet PDF文件第9页浏览型号F25S004A-50DG的Datasheet PDF文件第10页浏览型号F25S004A-50DG的Datasheet PDF文件第12页浏览型号F25S004A-50DG的Datasheet PDF文件第13页浏览型号F25S004A-50DG的Datasheet PDF文件第14页浏览型号F25S004A-50DG的Datasheet PDF文件第15页  
ESMT  
F25S004A  
Fast-Read (50 MHz)  
The High-Speed-Read instruction supporting up to 50 MHz is  
initiated by executing an 8-bit command, 0BH, followed by  
through all addresses until terminated by a low to high transition  
on CE . The internal address pointer will automatically increment  
until the highest memory address is reached. Once the highest  
memory address is reached, the address pointer will  
automatically increment to the beginning (wrap-around) of the  
address space, i.e. for 4Mbit density, once the data from address  
location 7FFFFH has been read, the next output will be from  
address location 000000H.  
address bits [A23-A0] and a dummy byte. CE must remain active  
low for the duration of the High-Speed-Read cycle. See Figure 3  
for the High-Speed-Read sequence.  
Following a dummy byte (8 clocks input dummy cycle), the  
High-Speed-Read instruction outputs the data starting from the  
specified address location. The data output stream is continuous  
CE  
0
1 2  
3
4 5 6 7  
8
15 16  
23 24  
31 32  
39 40  
47 48  
MODE3  
MODE0  
55 56  
63 64  
71 72  
80  
SCK  
SI  
0B  
ADD.  
MSB  
ADD.  
ADD.  
X
MSB  
N
N+1  
DOUT  
N+2  
DOUT  
N+3  
DOU T  
N+4  
DOU T  
HIGH IMPENANCE  
SO  
DOU T  
MSB  
Note : X = Dummy Byte : 8 Clocks Input Dummy (VIL or VIH)  
Figure 3 : HIGH-SPEED-READ SEQUENCE  
Elite Semiconductor Memory Technology Inc.  
Publication Date: Jan. 2009  
Revision: 1.1 11/33