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F25L32QA-100PAG2S 参数 Datasheet PDF下载

F25L32QA-100PAG2S图片预览
型号: F25L32QA-100PAG2S
PDF下载: 下载PDF文件 查看货源
内容描述: [Flash, 32MX1, PDSO8, 0.208 INCH, 1.27 MM PITCH, ROHS COMPLIANT, SOIC-8]
分类和应用: 时钟光电二极管内存集成电路
文件页数/大小: 51 页 / 411 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT  
F25L32QA (2S)  
Revision History  
Revision  
Date  
Description  
0.1  
2011.01.27  
Original  
1. Ordering information : add 2S  
2. Remove Byte program time  
3. Discriminate between status register -1 and status  
register -2  
4. Modify WSON 6x5mm dimension : D2 2.5(min),  
2.60(norm), 2.70(max) and E2 2.10(min), 2.20(norm),  
2.30(max)  
1. Add 32KB Block into sector address table  
2. Delete SOIC (150mil) and PDIP package  
3. Correct WRSR, Status Register-2 and block protection  
table  
0.2  
0.3  
2011.03.03  
2011.07.04  
4. Add RDSR-2  
5. Modify the specification of TCE(max)  
1. Correct command code of RDSR-2 in device operation  
instruction table  
2. Correct WRSR command  
Correct Status Register-2 in Software Status Register  
table  
0.4  
0.5  
2011.09.14  
2011.09.15  
0.6  
1.0  
1.1  
1.2  
1.3  
2011.10.13  
2012.02.20  
2012.04.18  
2012.07.20  
2012.09.21  
Modify minimum voltage from 2.7V to 2.65V  
Delete “Preliminary”  
Modify the range of TA  
Modify 100MHz to 104MHz for speed grade -100  
Modify Ambient Operating Temperature  
1. Modify the specification of TCPH  
2. Correct the description of Block Protection, Block  
Protection Lock-Down  
1.4  
2012.12.03  
1.5  
1.6  
1.7  
2013.03.28  
2013.04.17  
2013.04.23  
Modify normal read from 33MHz to 50MHz  
Correct max. value of TWHSL and TSHWL to min. value  
Add 8 lead SOIC (150 mil) package  
Elite Semiconductor Memory Technology Inc.  
Publication Date: Apr. 2013  
Revision: 1.7 50/51  
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