ESMT
F25L32QA (2S)
is divided into 1,024 uniform sectors with 4K byte each; 128
uniform blocks with 32K byte each; 64 uniform blocks with 64K
byte each. Sectors can be erased individually without affecting
the data in other sectors. Blocks can be erased individually
without affecting the data in other blocks. Whole chip erase
capabilities provide the flexibility to revise the data in the device.
The device has Sector, Block or Chip Erase but no page erase.
The sector protect/unprotect feature disables both program and
erase operations in any combination of the sectors of the
memory.
GENERAL DESCRIPTION
The F25L32QA is a 32Megabit, 3V only CMOS Serial Flash
memory device. The device supports the standard Serial
Peripheral Interface (SPI), and a Dual/Quad SPI. ESMT’s
memory devices reliably store memory data even after 100,000
programming and erase cycles.
The memory array can be organized into 16,384 programmable
pages of 256 byte each. 1 to 256 byte can be programmed at a
time with the Page Program instruction.
The device features sector erase architecture. The memory array
FUNCTIONAL BLOCK DIAGRAM
Page Address
Latch / Counter
High Voltage
Generator
Memory
Array
Page Buffer
Status
Register
Byte Address
Latch / Counter
Y-Decoder
Command and Conrol Logic
Serial Interface
CE
SCK
SI
(SIO
0
)
SO
WP
HOLD
(SIO
1
) (SIO
2
) (SIO
3
)
Elite Semiconductor Memory Technology Inc.
Publication Date: Apr. 2013
Revision: 1.7
2/51
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
