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F25L32QA-100HG2S 参数 Datasheet PDF下载

F25L32QA-100HG2S图片预览
型号: F25L32QA-100HG2S
PDF下载: 下载PDF文件 查看货源
内容描述: [Flash, 32MX1, PDSO8, 6 X 5 MM, 1.27 MM PITCH, ROHS COMPLIANT, WSON-8]
分类和应用: 时钟光电二极管内存集成电路
文件页数/大小: 51 页 / 411 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT  
F25L32QA (2S)  
VDD  
VDD (max)  
Program, Erase and Write command is ignored  
CE must track VDD  
VDD (min)  
Read command  
is allowed  
T
VSL  
Device is fully  
accessible  
Reset  
State  
VWI  
T
PUW  
Time  
Figure 33: Power-Up Timing Diagram  
Table 16: Power-Up Timing and VWI Threshold  
Unit  
Parameter  
Symbol  
Min.  
10  
1
Max.  
TVSL  
TPUW  
VWI  
us  
ms  
V
VDD(min) to CE low  
Time Delay before Write instruction  
10  
Write Inhibit Threshold Voltage  
1
2.5  
Note: These parameters are characterized only.  
Elite Semiconductor Memory Technology Inc.  
Publication Date: Apr. 2013  
Revision: 1.7 44/51  
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