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F25L08PA-50DG 参数 Datasheet PDF下载

F25L08PA-50DG图片预览
型号: F25L08PA-50DG
PDF下载: 下载PDF文件 查看货源
内容描述: 3V只有8兆位串行闪存,配有双 [3V Only 8 Mbit Serial Flash Memory with Dual]
分类和应用: 闪存
文件页数/大小: 32 页 / 489 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT
Table 1: F25L08PA Sector Address Table - Continued
Sector Size
(Kbytes)
4KB
:
4KB
4KB
:
4KB
4KB
:
4KB
Block Address
A19 A18
0
0
A17
1
A16
0
Block
Sector
47
2
:
32
31
1
:
16
15
0
:
0
Address range
02F000H – 02FFFFH
:
020000H – 020FFFH
01F000H – 01FFFFH
:
010000H – 010FFFH
00F000H – 00FFFFH
:
000000H – 000FFFH
0
0
0
0
0
0
0
1
F25L08PA
STATUS REGISTER
The software status register provides status on whether the flash
memory array is available for any Read or Write operation,
whether the device is Write enabled, and the state of the memory
Write protection. During an internal Erase or Program operation,
the status register may be read only to determine the completion
of an operation in progress. Table 2 describes the function of
each bit in the software status register.
Table 2: Software Status Register
Bit
0
1
2
3
4
5
6
7
Note:
1. Only BP0, BP1, BP2 and BPL are writable.
2. All register bits are volatility
3. All area are protected at power-on (BP2=BP1=BP0=1)
Name
BUSY
WEL
BP0
BP1
BP2
RESERVED
AAI
BPL
Function
1 = Internal Write operation is in progress
0 = No internal Write operation is in progress
1 = Device is memory Write enabled
0 = Device is not memory Write enabled
Indicate current level of block write protection (See Table 3)
Indicate current level of block write protection (See Table 3)
Indicate current level of block write protection (See Table 3)
Reserved for future use
Auto Address Increment Programming status
1 = AAI programming mode
0 = Page Program mode
1 = BP2,BP1,BP0 are read-only bits
0 = BP2,BP1,BP0 are read/writable
Default at
Power-up
0
0
1
1
1
0
0
0
Read/Write
R
R
R/W
R/W
R/W
N/A
R
R/W
Elite Semiconductor Memory Technology Inc.
Publication Date:
Jul. 2009
Revision: 1.7
5/32