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F25L016A-100PAIG 参数 Datasheet PDF下载

F25L016A-100PAIG图片预览
型号: F25L016A-100PAIG
PDF下载: 下载PDF文件 查看货源
内容描述: 16兆( 2Mx8 ) 3V只有串行闪存 [16Mbit (2Mx8) 3V Only Serial Flash Memory]
分类和应用: 闪存存储内存集成电路光电二极管时钟
文件页数/大小: 32 页 / 375 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT  
F25L016A  
Operation Temperature condition -40°C~85°C  
4K-Byte-Sector-Erase  
The Sector-Erase instruction clears all bits in the selected sector  
to FFH. A Sector-Erase instruction applied to a protected  
memory area will be ignored. Prior to any Write operation, the  
[AMS-A12] (AMS = Most Significant address) are used to determine  
the sector address (SAX), remaining address bits can be VIL or  
VIH. CE must be driven high before the instruction is executed.  
The user may poll the Busy bit in the software status register or  
wait TSE for the completion of the internal self-timed  
Sector-Erase cycle. See Figure 10 for the Sector-Erase  
sequence.  
Write-Enable (WREN) instruction must be executed. CE must  
remain active low for the duration of the any command sequence.  
The Sector-Erase instruction is initiated by executing an 8-bit  
command, 20H, followed by address bits [A23-A0]. Address bits  
CE  
0
1 2  
3
4 5 6 7  
8
15 16  
23 24  
31  
MODE3  
MODE0  
SCK  
SI  
20  
ADD.  
MSB  
ADD.  
ADD.  
MSB  
HIGH IMPENANCE  
SO  
FIGURE 10 : SEQUENCE-ERASE SEQUENCE  
Elite Semiconductor Memory Technology Inc.  
Publication Date: Jul. 2008  
Revision: 1.2 17/32  
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