ESMT
F25L008A
Operation Temperature condition -40
°C
~85
°C
of each other. The WRSR instruction must be executed immediately (very next bus cycle) after the EWSR instruction to make both
instructions effective.
9. The Read-Electronic-Signature is continuous with on going clock cycles until terminated by a low to high transition on CE .
10. The Jedec-Read-ID is output first byte 8CH as manufacture ID; second byte 20H as top memory type; third byte 14H as memory
capacity.
11. The Write-Enable (WREN) instruction and the Write-Status-Register (WRSR) instruction must work in conjunction of each other.
The WRSR instruction must be executed immediately (very next bus cycle) after the WREN instruction to make both instructions
effective. Both EWSR and WREN can enable WRSR, user just need to execute one of it. A successful WRSR can reset WREN.
Read (33 MHz)
The Read instruction supports up to 33 MHz, it outputs the data
starting from the specified address location. The data output
stream is continuous through all addresses until terminated by a
low to high transition on CE . The internal address pointer will
automatically increment until the highest memory address is
reached. Once the highest memory address is reached, the
address pointer will automatically increment to the beginning
(wrap-around) of the address space, i.e. for 8Mbit density, once
the data from address location FFFFFH had been read, the next
output will be from address location 00000H.
The Read instruction is initiated by executing an 8-bit command,
03H, followed by address bits [A
23
-A
0
]. CE must remain active
low for the duration of the Read cycle. See Figure 2 for the Read
sequence.
CE
MODE3
SCK MODE1
1 2 3 4 5 6 7 8
15 16
23 24
31 32
39 40
47 48
55 56
63 64
70
SI
MSB
03
ADD.
MSB
ADD.
ADD.
SO
HIGH IMPENANCE
MSB
N
D
OUT
N+1
D
OUT
N+2
D
OUT
N+3
D
OUT
N+4
D
OUT
Figure 2 : READ SEQUENCE
Elite Semiconductor Memory Technology Inc.
Publication Date: Jul. 2008
Revision:
1.2
9/30
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
