欢迎访问ic37.com |
会员登录 免费注册
发布采购

F25L004A-50PAIG 参数 Datasheet PDF下载

F25L004A-50PAIG图片预览
型号: F25L004A-50PAIG
PDF下载: 下载PDF文件 查看货源
内容描述: 3V只有4兆位串行闪存操作温度条件-40 ° C〜 85°C [3V Only 4 Mbit Serial Flash Memory Operation Temperature Condition -40°C ~85°C]
分类和应用: 闪存存储内存集成电路光电二极管时钟
文件页数/大小: 33 页 / 560 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
 浏览型号F25L004A-50PAIG的Datasheet PDF文件第14页浏览型号F25L004A-50PAIG的Datasheet PDF文件第15页浏览型号F25L004A-50PAIG的Datasheet PDF文件第16页浏览型号F25L004A-50PAIG的Datasheet PDF文件第17页浏览型号F25L004A-50PAIG的Datasheet PDF文件第19页浏览型号F25L004A-50PAIG的Datasheet PDF文件第20页浏览型号F25L004A-50PAIG的Datasheet PDF文件第21页浏览型号F25L004A-50PAIG的Datasheet PDF文件第22页  
ESMT  
F25L004A  
Operation Temperature Condition -40°C ~85°C  
Write-Enable (WREN)  
The Write-Enable (WREN) instruction sets the Write-  
Enable-Latch bit to 1 allowing Write operations to occur.  
The WREN instruction must be executed prior to any Write  
(Program/Erase) operation. CE must be driven high before the  
WREN instruction is executed.  
CE  
0 1 2 3 4 5 6 7  
MODE3  
MODE0  
SCK  
SI  
06  
MSB  
HIGH IMPENANCE  
SO  
FIGURE 13 : WRITE ENABLE (WREN) SEQUENCE  
Write-Disable (WRDI)  
The Write-Disable (WRDI) instruction resets the Write-Enable-Latch  
bit and AAI bit to 0 disabling any new Write operations from occurring.  
CE must be driven high before the WRDI instruction is executed.  
CE  
0 1 2 3 4 5 6 7  
MODE3  
MODE0  
SCK  
SI  
04  
MSB  
HIGH IMPENANCE  
SO  
Figure 14 : WRITE DISABLE (WRDI) SEQUENCE  
Elite Semiconductor Memory Technology Inc.  
Publication Date: Jan. 2009  
Revision: 1.3  
18/33  
 复制成功!