欢迎访问ic37.com |
会员登录 免费注册
发布采购

F25L004A-100DIG 参数 Datasheet PDF下载

F25L004A-100DIG图片预览
型号: F25L004A-100DIG
PDF下载: 下载PDF文件 查看货源
内容描述: 3V只有4兆位串行闪存操作温度条件-40 ° C〜 85°C [3V Only 4 Mbit Serial Flash Memory Operation Temperature Condition -40°C ~85°C]
分类和应用: 闪存
文件页数/大小: 33 页 / 560 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
 浏览型号F25L004A-100DIG的Datasheet PDF文件第1页浏览型号F25L004A-100DIG的Datasheet PDF文件第2页浏览型号F25L004A-100DIG的Datasheet PDF文件第3页浏览型号F25L004A-100DIG的Datasheet PDF文件第4页浏览型号F25L004A-100DIG的Datasheet PDF文件第6页浏览型号F25L004A-100DIG的Datasheet PDF文件第7页浏览型号F25L004A-100DIG的Datasheet PDF文件第8页浏览型号F25L004A-100DIG的Datasheet PDF文件第9页  
ESMT
Table2 : F25L004A Block Protection Table
F25L004A
Operation Temperature Condition -40
°C
~85
°C
Protection Level
0
Upper 1/8
Upper 1/4
Upper 1/2
All Blocks
All Blocks
All Blocks
All Blocks
0
0
0
0
1
1
1
1
Status Register Bit
BP2
BP1
0
0
1
1
0
0
1
1
BP0
0
1
0
1
0
1
0
1
Protected Memory Area
Block Range
None
Block 7
Block 6~7
Block 4~7
Block 0~7
Block 0~7
Block 0~7
Block 0~7
Address Range
None
70000H – 7FFFFH
60000H – 7FFFFH
40000H – 7FFFFH
00000H – 7FFFFH
00000H – 7FFFFH
00000H – 7FFFFH
00000H – 7FFFFH
Block Protection (BP2, BP1, BP0)
The Block-Protection (BP2, BP1, BP0) bits define the size of the
memory area, as defined in Table2 to be software protected
against any memory Write (Program or Erase) operations. The
Write-Status-Register (WRSR) instruction is used to program the
BP2, BP1, BP0 bits as long as
WP
is high or the
Block-Protection-Look (BPL) bit is 0. Chip-Erase can only be
executed if Block-Protection bits are all 0. After power-up, BP2,
BP1 and BP0 are set to1.
Block Protection Lock-Down (BPL)
WP
pin driven low (V
IL
), enables the Block-Protection
-Lock-Down (BPL) bit. When BPL is set to 1, it prevents any
further alteration of the BPL, BP2, BP1, and BP0 bits. When the
WP
pin is driven high (V
IH
), the BPL bit has no effect and its
value is “Don’t Care”. After power-up, the BPL bit is reset to 0.
Elite Semiconductor Memory Technology Inc.
Publication Date: Jan. 2009
Revision:
1.3
5/33