ESMT
F25L08QA (2S)
is divided into 256 uniform sectors with 4K byte each; 32 uniform
blocks with 32K byte each; 16 uniform blocks with 64K byte each.
Sectors can be erased individually without affecting the data in
other sectors. Blocks can be erased individually without affecting
the data in other blocks. Whole chip erase capabilities provide
the flexibility to revise the data in the device. The device has
Sector, Block or Chip Erase but no page erase.
The sector protect/unprotect feature disables both program and
erase operations in any combination of the sectors of the
memory.
GENERAL DESCRIPTION
The F25L08QA is a 8Megabit, 3V only CMOS Serial Flash
memory device. The device supports the standard Serial
Peripheral Interface (SPI), and a Dual/Quad SPI. ESMT’s
memory devices reliably store memory data even after 100,000
programming and erase cycles.
The memory array can be organized into 4,096 programmable
pages of 256 byte each. 1 to 256 byte can be programmed at a
time with the Page Program instruction.
The device features sector erase architecture. The memory array
FUNCTIONAL BLOCK DIAGRAM
Page Address
Latch / Counter
High Voltage
Generator
Memory
Array
Page Buffer
Status
Register
Byte Address
Latch / Counter
Y-Decoder
Command and Conrol Logic
Serial Interface
CE
SCK
SI
(SIO
0
)
SO
WP
HOLD
(SIO
1
) (SIO
2
) (SIO
3
)
Elite Semiconductor Memory Technology Inc.
Publication Date: Nov. 2013
Revision: 1.2
2/43
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
