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F25L04PA-100PAG2D 参数 Datasheet PDF下载

F25L04PA-100PAG2D图片预览
型号: F25L04PA-100PAG2D
PDF下载: 下载PDF文件 查看货源
内容描述: [Flash, 4MX1, PDSO8, 0.208 INCH, 1.27 MM PITCH, ROHS COMPLIANT, SOIC-8]
分类和应用: 时钟光电二极管内存集成电路
文件页数/大小: 33 页 / 328 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT  
F25L04PA (2D)  
memory capacity.  
9. The Write-Enable (WREN) instruction and the Write-Status-Register (WRSR) instruction must work in conjunction of each  
other. The WRSR instruction must be executed immediately (very next bus cycle) after the WREN instruction to make both  
instructions effective. WREN can enable WRSR, user just need to execute it. A successful WRSR can reset WREN.  
10. The Manufacture ID and Device ID output will repeat continuously until CE terminates the instruction.  
11. Dual commands use bidirectional IO pins. DOUT and cont. are serial data out; others are serial data in.  
12. Dual output data:  
IO  
IO  
0
= (D  
6
, D  
4
, D  
2
, D  
0
), (D  
6
, D  
4
, D  
2
, D  
0
)
)
1
= (D  
7
, D5  
, D3  
, D1  
), (D  
7
, D5  
, D3  
, D1  
DOUT0  
DOUT1  
13. Max Load capacitance is 15pF.  
Elite Semiconductor Memory Technology Inc.  
Publication Date: Aug. 2012  
Revision: 1.4 10/33