ESMT
Flash
F25L04PA (2D)
3V Only 4 Mbit Serial Flash Memory
with Dual Output
FEATURES
Single supply voltage 2.3~3.6V
Standard, Dual SPI
Speed
- Read max frequency: 33MHz
- Fast Read max frequency: 50MHz; 86MHz; 100MHz
- Fast Read Dual max frequency: 50MHz / 86MHz
(100MHz / 172MHz equivalent Dual SPI)
Low power consumption
- Active current: 20 mA
- Standby current: 25
μ
A
- Deep Power Down current: 10
μ
A
Reliability
- 100,000 typical program/erase cycles
- 20 years Data Retention
Program
- Page programming time: 0.7 ms (typical)
Erase
- Chip erase time 1 sec (typical)
- Block erase time 0.15 sec (typical)
- Sector erase time 30 ms (typical)
Page Programming
- 256 byte per programmable page
SPI Serial Interface
- SPI Compatible: Mode 0 and Mode 3
End of program or erase detection
Write Protect (
WP
)
Hold Pin ( HOLD )
All Pb-free products are RoHS-Compliant
ORDERING INFORMATION
Product ID
F25L04PA –50PG2D
F25L04PA –86PG2D
F25L04PA –100PG2D
F25L04PA –50PAG2D
F25L04PA –86PAG2D
F25L04PA –100PAG2D
F25L04PA –50HG2D
F25L04PA –86HG2D
F25L04PA –100HG2D
Speed
50MHz
86MHz
100MHz
50MHz
86MHz
100MHz
50MHz
86MHz
100MHz
8-contact
WSON
6x5 mm
Pb-free
8-lead
SOIC
200 mil
Pb-free
8-lead
SOIC
150 mil
Pb-free
Package
Comments
GENERAL DESCRIPTION
is divided into 128 uniform sectors with 4K byte each; 8 uniform
blocks with 64K byte each. Sectors can be erased individually
without affecting the data in other sectors. Blocks can be erased
individually without affecting the data in other blocks. Whole chip
erase capabilities provide the flexibility to revise the data in the
device. The device has Sector, Block or Chip Erase but no page
erase.
The sector protect/unprotect feature disables both program and
erase operations in any combination of the sectors of the
memory.
The F25L04PA is a 4Megabit, 3V only CMOS Serial Flash
memory device. The device supports the standard Serial
Peripheral Interface (SPI), and a Dual SPI. ESMT’s memory
devices reliably store memory data even after 100,000
programming and erase cycles.
The memory array can be organized into 2,048 programmable
pages of 256 byte each. 1 to 256 byte can be programmed at a
time with the Page Program instruction.
The device features sector erase architecture. The memory array
Elite Semiconductor Memory Technology Inc.
Publication Date:
Aug.
2012
Revision:
1.4
1/33
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
