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F25L008A-50PAG 参数 Datasheet PDF下载

F25L008A-50PAG图片预览
型号: F25L008A-50PAG
PDF下载: 下载PDF文件 查看货源
内容描述: 8Mbit的( 1Mx8 ) 3V只有串行闪存 [8Mbit (1Mx8) 3V Only Serial Flash Memory]
分类和应用: 闪存存储内存集成电路光电二极管时钟
文件页数/大小: 31 页 / 359 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT  
F25L008A  
64K-Byte Block-Erase  
The 64K Byte Block-Erase instruction clears all bits in the  
selected block to FFH. A Block-Erase instruction applied to a  
protected memory area will be ignored. Prior to any Write  
operation, the Write-Enable (WREN) instruction must be  
[A23-A0]. Address bits [AMS-A16] (AMS = Most Significant address)  
are used to determine the block address (BAX), remaining  
address bits can be VIL or VIH. CE must be driven high before  
the instruction is executed. The user may poll the Busy bit in the  
software status register or wait TBE for the completion of the  
internal self-timed Block-Erase cycle. See Figure 5 for the  
Block-Erase sequence.  
executed. CE must remain active low for the duration of the any  
command sequence. The Block-Erase instruction is initiated by  
executing an 8-bit command, D8H, followed by address bits  
FIGURE 5 : 64-KBYTE BLOCK-ERASE SEQUENCE  
Elite Semiconductor Memory Technology Inc.  
Publication Date: May. 2007  
Revision: 1.4 15/31  
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