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EN29LV160AT-70UIP 参数 Datasheet PDF下载

EN29LV160AT-70UIP图片预览
型号: EN29LV160AT-70UIP
PDF下载: 下载PDF文件 查看货源
内容描述: [Flash, 1MX16, 70ns, PDSO44, SOP-44]
分类和应用: 光电二极管内存集成电路闪存
文件页数/大小: 44 页 / 1435 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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EN29LV160A  
Hardware Data protection  
The command sequence requirement of unlock cycles for programming or erasing provides data  
protection against inadvertent writes as seen in the Command Definitions table. Additionally, the  
following hardware data protection measures prevent accidental erasure or programming, which  
might otherwise be caused by false system level signals during Vcc power up and power down  
transitions, or from system noise.  
Low VCC Write Inhibit  
When Vcc is less than VLKO, the device does not accept any write cycles. This protects data during  
Vcc power up and power down. The command register and all internal program/erase circuits are  
disabled, and the device resets. Subsequent writes are ignored until Vcc is greater than VLKO. The  
system must provide the proper signals to the control pins to prevent unintentional writes when Vcc is  
greater than VLKO  
.
Write Pulse “Glitch” protection  
Noise pulses of less than 5 ns (typical) on OE#, CE# or WE# do not initiate a write cycle.  
Logical Inhibit  
Write cycles are inhibited by holding any one of OE# = VIL, CE# = VIH, or WE# = VIH. To initiate a  
write cycle, CE# and WE# must be a logical zero while OE# is a logical one. If CE#, WE#, and OE#  
are all logical zero (not recommended usage), it will be considered a read.  
Power-up Write Inhibit  
During power-up, the device automatically resets to READ mode and locks out write cycles. Even  
with CE# = VIL, WE#= VIL and OE# = VIH, the device will not accept commands on the rising edge of  
WE#.  
This Data Sheet may be revised by subsequent versions  
or modifications due to changes in technical specifications.  
©2004 Eon Silicon Solution, Inc., www.essi.com.tw  
13  
Rev. I, Issue Date: 2008/07/17