EN25P05
Revisions List
Revision No Description
Date
A
B
Initial release
2006/04/10
2006/12/27
1.
Change clock rate from 50MHz to 75MHz,
Page program time 1.4 ms typical to 1.5 ms typical
in page 1
2. Change Table 8 DC Characteristics in page 21
(1) Add I
for 75MHz
CC3
3. Change Table 10 to 75MHz AC Characteristics in page 22
(1) Change FR from 50 to 75MHz
(2) Change fR from 33 to 50MHz
(3) Change tCLH from 9ns to 6ns
(4) Change tCLL from 9ns to 6ns
(5) Change tSHQZ from 9ns to 6ns
(6) Change tHLQZ from 9ns to 6ns
(7) Change tHHQZ from 9ns to 6ns
(8) Change tCLQV from 9ns to 6ns
(9) Change Page program time 1.4ms typical to 1.5ms
4. Add Table 11: 50MHz AC Characteristics in page 23
(1) Change Page program time 1.4ms typical to 1.5ms
5. Add 75MHz option in Ordering Information in page 29
tRES2
C
2008/01/17
1. Modify the Figure 16 in page 18 for the starting point of
2. Modify the Figure 17 in page 18
(1) revise the manufacture ID to 1Ch
(2) the number of clock count to cover the manufacture ID
should be 31 to 38 and the last clock to clock out device ID is
46.
3. Modify the Figure 18 in page 19, the clock count to cover the
device ID should be from 15 to 31
4. Change Table 7 Write Inhibit Voltage (Max) from 2V to 2.5V
in page 20
5. Update the Figure 24. SOP 8 (150 mil) package drawing in
page 27
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
30
Rev. C, Issue Date: 2008/01/17
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
