EN25B16
Table 13. DATA RETENTION and ENDURANCE
Parameter Description
Minimum Pattern Data Retention Time
Erase/Program Endurance
Test Conditions
Min
Unit
150°C
125°C
10
Years
20
Years
cycles
-40 to 85 °C
100k
Table 14. LATCH UP CHARACTERISTICS
Parameter Description
Min
Max
Input voltage with respect to Vss on all pins except I/O pins
(including A9, Reset and OE#)
-1.0 V
12.0 V
Input voltage with respect to Vss on all I/O Pins
Vcc Current
-1.0 V
Vcc + 1.0 V
100 mA
-100 mA
Note : These are latch up characteristics and the device should never be put under these conditions. Refer to
Absolute Maximum ratings for the actual operating limits.
Table 15. CAPACITANCE
( VCC = 2.7-3.6V)
Parameter Symbol
Parameter Description
Test Setup
= 0
Typ
Max
Unit
C
IN
V
IN
Input Capacitance
6
pF
C
OUT
V
OUT
= 0
Output Capacitance
8
pF
Note : Sampled only, not 100% tested, at T = 25°C and a frequency of 20MHz.
A
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
30
Rev. E, Issue Date: 2007/06/07
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
