EN25B16
Table 8. DC Characteristics
(Ta = 0°C to 70°C or - 40°C to 85°C; VCC = 2.7-3.6V)
Symbol
Parameter
Test Conditions
Min.
Max.
Unit
I
Input Leakage Current
± 2
µA
LI
I
Output Leakage Current
Standby Current
± 2
10
10
µA
µA
µA
LO
I
CS# = V , V = V
CC IN
CS# = V , V = V
CC IN
or V
or V
at
CC1
SS
SS
CC
CC
I
Deep Power-down Current
CC2
CLK = 0.1 V
/ 0.9 V
CC
CC
20
15
12
mA
mA
mA
75MHz, Q = open
CLK = 0.1 V / 0.9 V
at
at
CC CC
I
Operating Current (READ)
CC3
50MHz, Q = open
CLK = 0.1 V / 0.9 V
CC CC
33MHz, Q = open
I
Operating Current (PP)
Operating Current (WRSR)
Operating Current (SE)
Operating Current (BE)
CS# = V
CC
CS# = V
CC
CS# = V
CC
CS# = V
CC
15
15
15
15
mA
mA
mA
mA
CC4
I
CC5
I
CC6
I
CC7
V
0.2 V
CC
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
– 0.5
0.7V
V
V
V
V
IL
V
V +0.4
CC
IH
CC
V
I
I
= 1.6 mA
0.4
OL
OL
V
= –100 µA
V
-0.2
OH
OH
CC
Table 9. AC Measurement Conditions
Symbol
Parameter
Min.
Max.
Unit
Load Capacitance
30
pF
ns
V
CL
Input Rise and Fall Times
5
Input Pulse Voltages
0.2VCC to 0.8VCC
0.3VCC to 0.7VCC
Input Timing Reference Voltages
Output Timing Reference Voltages
V
V
V
CC / 2
Figure 20. AC Measurement I/O Waveform
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
24
Rev. E, Issue Date: 2007/06/07
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
