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EN25B16T-100VCP 参数 Datasheet PDF下载

EN25B16T-100VCP图片预览
型号: EN25B16T-100VCP
PDF下载: 下载PDF文件 查看货源
内容描述: [Flash Memory,]
分类和应用:
文件页数/大小: 37 页 / 474 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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EN25B16  
Revisions List  
Revision No Description  
Date  
A
B
Initial Release  
2006/05/25  
2006/08/08  
1. Add 16 pin SOP 300mil body width for package options in  
page 1  
2. Add 16 pin SOP 300mil diagram in Figure 1  
3.  
Add INSTRUCTIONS description in page 10  
4. Add figure 26 of SOP 300mil package  
5. Add 16 pin SOP package option ‘F’ to ordering information  
C
1.  
2006/12/22  
Change clock rate from 50MHz to 75MHz,  
Page program time 1.4 ms typical to 1.5 ms typical  
Sector erase time 100 to 300 ms typical to 300 to 800 ms  
Chip erase time 10 seconds to 18 seconds typical  
in page 1  
2. Change Table 8 DC Characteristics in page 24  
(1) Add I  
for 75MHz  
CC3  
3. Change Table 10 to 75MHz AC Characteristics in page 25  
(1) Change FR from 50 to 75MHz  
(2) Change fR from 33 to 50MHz  
(3) Change tCLH from 9ns to 6ns  
(4) Change tCLL from 9ns to 6ns  
(5) Change tSHQZ from 9ns to 6ns  
(6) Change tHLQZ from 9ns to 6ns  
(7) Change tHHQZ from 9ns to 6ns  
(8) Change tCLQV from 9ns to 6ns  
(9) Change Page program time 1.4ms typical to 1.5ms  
(10) Change 64KB Sector erase time 0.3 / 0.6 seconds to  
0.8 / 2 seconds for typical and maximum  
(11) Change 16KB Sector erase time 0.15 / 0.3 seconds to  
0.5 / 1 seconds for typical and maximum  
(12) Change 4KB Sector erase time 0.1 / 0.2 seconds to  
0.3 / 0.6 seconds for typical and maximum  
(13) Change Chip erase time 10 / 20 seconds to 18 / 35  
seconds for typical and maximum  
4. Add Table 11: 50MHz AC Characteristics in page 26  
(1) Change Page program time 1.4ms typical to 1.5ms  
(2) Change 64KB Sector erase time 0.3 / 0.6 seconds to  
0.8 / 2 seconds for typical and maximum  
(3) Change 16KB Sector erase time 0.15 / 0.3 seconds to  
0.5 / 1 seconds for typical and maximum  
(4) Change 4KB Sector erase time 0.1 / 0.2 seconds to  
0.3 / 0.6 seconds for typical and maximum  
(5) Change Chip erase time 10 / 20 seconds to 18 / 35  
seconds for typical and maximum  
5. Add 75MHz option in Ordering Information in page 33  
6.  
Change Table 8. DC Characteristics VIL Max 0.3 VCC to 0.2  
VCC in page 24  
D
2007/05/11  
1. Change clock rate from 75MHz to 100MHz in page 1  
2.  
Change Table 7 Write Inhibit Voltage (Max) from 2V to 2.5V  
in page 23  
Add Table 10: 100MHz AC Characteristics in page 25  
3.  
This Data Sheet may be revised by subsequent versions  
or modifications due to changes in technical specifications.  
©2004 Eon Silicon Solution, Inc., www.essi.com.tw  
36  
Rev. E, Issue Date: 2007/06/07  
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