EN25B16
Table 10. 100MHz AC Characteristics
(Ta = 0°C to 70°C or – 40°C to 85°C; VCC = 3.0-3.6V)
Min
Typ
Max
Unit
Symbol
Alt
fC
Parameter
Serial Clock Frequency for:
FAST_READ, PP, SE, BE, DP, RES, WREN,
WRDI, RDSR, WRSR
FR
D.C.
100
MHz
fR
Serial Clock Frequency READ instruction
Serial Clock High Time
D.C.
4
66
MHz
ns
1
tCLH
1
tCLL
Serial Clock Low Time
4
ns
2
tCLCH
Serial Clock Rise Time (Slew Rate)
Serial Clock Fall Time (Slew Rate)
CS# Active Setup Time
0.1
0.1
5
V / ns
V / ns
ns
2
tCHCL
tSLCH
tCHSH
tSHCH
tCHSL
tSHSL
tCSS
CS# Active Hold Time
5
ns
CS# Not Active Setup Time
CS# Not Active Hold Time
5
ns
5
ns
tCSH
tDIS
tHO
CS# High Time
100
ns
2
tSHQZ
Output Disable Time
6
ns
tCLQX
tDVCH
tCHDX
tHLCH
tHHCH
tCHHH
tCHHL
Output Hold Time
0
2
5
5
5
5
5
ns
tDSU
tDH
Data In Setup Time
ns
Data In Hold Time
ns
HOLD# Low Setup Time ( relative to SCK )
HOLD# High Setup Time ( relative to SCK )
HOLD# Low Hold Time ( relative to SCK )
HOLD# High Hold Time ( relative to SCK )
HOLD# Low to High-Z Output
HOLD# High to Low-Z Output
Output Valid from SCK
ns
ns
ns
ns
2
tHZ
tLZ
tV
tHLQZ
6
6
9
ns
2
tHHQZ
ns
tCLQV
ns
3
tWHSL
Write Protect Setup Time before CS# Low
Write Protect Hold Time after CS# High
CS# High to Deep Power-down Mode
20
ns
3
tSHWL
100
ns
2
tDP
3
3
µs
CS# High to Standby Mode without Electronic
Signature read
2
tRES1
µs
µs
CS# High to Standby Mode with Electronic
Signature read
2
tRES2
1.8
tW
Write Status Register Cycle Time
Page Programming Time
10
15
5
ms
ms
tPP
1.5
Sector Erase Time 64KB sectors
Sector Erase Time 16KB sectors
Sector Erase Time 4KB sectors
0.8
0.5
0.3
2
1
0.6
tSE
s
s
tBE
Note: 1. TSCKH + T
Bulk Erase Time
18
35
must be greater than or equal to 1/ FCLK
SCKL
2. Value guaranteed by characterization, not 100% tested in production.
3. Only applicable as a constraint for a Write status Register instruction when Sector Protect Bit is set at 1.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
25
Rev. E, Issue Date: 2007/06/07
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
