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EN25B16T-100VCP 参数 Datasheet PDF下载

EN25B16T-100VCP图片预览
型号: EN25B16T-100VCP
PDF下载: 下载PDF文件 查看货源
内容描述: [Flash Memory,]
分类和应用:
文件页数/大小: 37 页 / 474 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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EN25B16  
Write Enable (WREN) (06h)  
The Write Enable (WREN) instruction (Figure 5) sets the Write Enable Latch (WEL) bit. The Write Enable  
Latch (WEL) bit must be set prior to every Page Program (PP), Sector Erase (SE), Bulk Erase (BE) and  
Write Status Register (WRSR) instruction.  
The Write Enable (WREN) instruction is entered by driving Chip Select (CS#) Low, sending the instruction  
code, and then driving Chip Select (CS#) High.  
Write Disable (WRDI) (04h)  
The Write Disable instruction (Figure 6) resets the Write Enable Latch (WEL) bit in the Status Register to  
a 0. The Write Disable instruction is entered by driving Chip Select (CS#) low, shifting the instruction code  
“04h” into the DI pin and then driving Chip Select (CS#) high. Note that the WEL bit is automatically reset  
after Power-up and upon completion of the Write Status Register, Page Program, Sector Erase, and Bulk  
Erase instructions.  
Read Status Register (RDSR) (05h)  
The Read Status Register (RDSR) instruction allows the Status Register to be read. The Status Register  
may be read at any time, even while a Program, Erase or Write Status Register cycle is in progress.  
When one of these cycles is in progress, it is recommended to check the Write In Progress (WIP) bit  
before sending a new instruction to the device. It is also possible to read the Status Register continuously,  
as shown in Figure 7.  
This Data Sheet may be revised by subsequent versions  
or modifications due to changes in technical specifications.  
©2004 Eon Silicon Solution, Inc., www.essi.com.tw  
12  
Rev. E, Issue Date: 2007/06/07