PTF 10053
Electrical Characteristics
(100% Tested)
Characteristic
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Forward Transconductance
e
Conditions
V
GS
= 0 V, I
D
= 50 mA
V
DS
= 26 V, V
GS
= 0 V
V
DS
= 10 V, I
D
= 75 mA
V
DS
= 10 V, I
D
= 2 A
Symbol
V
(BR)DSS
I
DSS
V
GS(th)
g
fs
Min
65
—
3.0
—
Typ
—
—
—
0.8
Max
—
1.0
5.0
—
Units
Volts
mA
Volts
Siemens
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Operating Junction Temperature
Total Device Dissipation
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (T
CASE
= 70°C)
T
STG
R
qJC
Symbol
V
DSS
V
GS
T
J
P
D
Value
65
±20
200
58
0.33
–40 to +150
3.0
Unit
Vdc
Vdc
°C
Watts
W/°C
°C
°C/W
Typical Performance
P
OUT
, Gain & Efficiency
(at P-1dB)
vs. Frequency
14
Broadband Test Fixture Performance
60
Gain (dB)
50
40
Efficiency (%)
Gain (dB) and Output Power (W)
16
15
14
13
12
11
10
Output Power (W)
55
50
12
Efficiency (%)
X
40
Gain (dB)
Efficiency (%)
45
10
8
6
4
2
1925
V
DD
= 26 V
I
DQ
= 155 mA
Gain (dB)
35
30
25
20
2050
I
DQ
= 155 mA
Pout = 10 W
Return Loss
20
-10
-20
10
-30
0
2000
9
1750
1800
1850
1900
1950
2000
1950
1975
Frequency (MHz)
Frequency (MHz)
2
Return Loss (dB)
X
V
DD
= 26 V
30
0
Efficiency (%)
ERICSSON [ ERICSSON ]
