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PTF10031 参数 Datasheet PDF下载

PTF10031图片预览
型号: PTF10031
PDF下载: 下载PDF文件 查看货源
内容描述: 50瓦, 1.0 GHz的GOLDMOS场效应晶体管 [50 Watts, 1.0 GHz GOLDMOS Field Effect Transistor]
分类和应用: 晶体射频场效应晶体管放大器局域网
文件页数/大小: 6 页 / 218 K
品牌: ERICSSON [ ERICSSON ]
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PTF 10031  
e
Electrical Characteristics (100% Tested)  
Characteristic  
Conditions  
Symbol Min  
Typ  
Max  
Units  
Volts  
Drain-Source Breakdown Voltage  
Drain-Source Leakage Current  
Gate Threshold Voltage  
V
GS  
V
DS  
V
DS  
V
DS  
= 0 V, I = 25 mA  
V
(BR)DSS  
65  
D
= 28 V, V = 0 V  
I
1.0  
5.0  
mA  
GS  
DSS  
= 10 V, I = 75 mA  
V
3.0  
Volts  
D
GS(th)  
Forward Transconductance  
= 10 V, I = 3 A  
g
2.8  
Siemens  
D
fs  
RF Specifications (100% Tested)  
Characteristic  
Symbol Min  
Typ  
Max  
Units  
Common Source Power Gain  
(V = 28 V, P  
= 50 W, I  
= 350 mA, f = 960 MHz)  
G
ps  
12.0  
50  
13.0  
55  
dB  
Watts  
%
DD  
OUT  
DQ  
Power Output at 1 dB Compression  
(V = 28 V, I = 350 mA, f = 960 MHz)  
P-1dB  
DD  
DQ  
Drain Efficiency  
(V = 28 V, P  
= 50 W, I  
= 350 mA, f = 960 MHz)  
h
50  
55  
DD  
OUT  
DQ  
Load Mismatch Tolerance  
(V = 28 V, P = 50 W, I  
= 350 mA, f = 960 MHz—  
Y
10:1  
DD  
OUT  
DQ  
all phase angles at frequency of test)  
Typical Performance  
Intermodulation Distortion vs. Power Output  
-15  
Gain vs. Power Output  
16  
VDD = 28 V  
3rd Order  
15  
14  
13  
IDQ = 350 mA  
-25  
f1 = 950.000 MHz  
f2 = 950.100 MHz  
-35  
5th  
VDD = 28 V  
12  
IDQ = 350 mA  
-45  
11  
f = 960 MHz  
7th  
10  
-55  
0
10  
20  
30  
40  
50  
60  
70  
0
10  
20  
30  
40  
50  
60  
70  
Power Output (Watts)  
Output Power (Watts PEP)  
2