Crystal Oscillators - Seiko Epson
H C M O S / T T L D UA L I N L I N E P L A S T I C F U L L S I Z E S G - 5 1 / H A L F S I Z E S G - 5 3 1
SG-51/Half Size SG531
SG531
Features
• Frequency range 1.025MHz-125.0MHz
• Cylindrical type AT cut crystal quartz built in,
thereby assuring high reliability
• Suitable for automatic insertion
• Use of CMOS IC enables reduction of current
consumption
• Output load 10LSTTL/30-50pF
• Available with output enable and standby
functions - SG51P and SG531P series
• Pin compatible with 8 pin and 14 pin metal can
versions
• Packaged in plastic DIP package saves board
space
• Extensive stock holding on SG531 series
SG51
Specifications
Item
Symbol
SG-51P/531P
Output frequency range
fo
1.0250MHz to
26.0000MHz
Specifications
SG-51PTJ/531 PTJ
Remarks
SG-51PH/531PH
26.0001MHZ to 66.6667MHZ
Power source
Max. supply voltage V
pp
-GND
voltage
Operating voltage
V
DD
T
STG
Temperature
Storage temp.
T
OPR
range
Operating temp.
T
SOL
Soldering condition (lead part)
∆f/fo
Frequency stability
Current consumption
Duty
C-MOS level
TTL level
Output voltage
lop
Tw/T
V
OH
(I
OH
)
V
OL
(I
OL
)
CL
N
V
IH
V
IL
I
OE
T
TLH
T
THL
t
OSC
fa
S.R.
Output load
C-MOS
condition (fan out) TTL
Output enable/disable input voltage
Output disable current
Output
C-MOS level
rise time
TTL level
Output
C-MOS level
fall time
TTL level
Oscillation start up time
Aging
Shock resistance
-0.3V to +7.0V
5.0V±0.5V
-55°C to +125°C
-55°C to +100°C
-10°C to +70°C
Under 260°C within 10 sec.
B: ±50ppm
C: ±100ppm
23mA MAX.
35mA MAX.
40% to 60%
–
40% to 60%
45% to 55%
–
2.4V MIN.
V
DD
-0.4V MIN.
V
DD
- 0.4V MIN.
-400µA
-4µA
0.4V MAX.
16mA
8mA
4mA
50pF MAX.
–
50pF MAX.
10TTL MAX.
5TTL MAX.
–
2.0V MIN
3.5V MIN.
2.0V MIN.
0.8V
1.5V MAX.
0.8V MAX.
12mA MAX.
28mA MAX.
20mA MAX.
8nsec.MAX
8nsec.MAX
4msec. MAX.
5nsec. MAX
5nsec. MAX
7nsec. MAX.
7nsec. MAX.
Don’t heat up the package more than 150°C
-10°C to +70°C
B Type is possible up to 55.0MHz
No load condition
1.2V
DD
level
1.4V level
10msec. MAX.
±5ppm/year MAX.
±20ppm MAX.
I
IH
= 1
µ
A MAX. (OE=V
DD
)
I
IL
=-100
µ
A MIN. (OE=GND), PTJ: -500
µ
A
OE=GN
C-MOS load : 20% to 80% V
DD
TTL load : 0.4V to 2.4V
C-MOS load : 80% to 20% V
DD
TTL load : 2.4V to 0.4V
More than for 1ms until V
DD
=0V to 4.5V
Time at 4.5V to be 0sec.
Ta = 25°C, V
DD
=5V, first year
Drop Test of three times on hard board from
75cm height or excitation test with 3000G x
0.3ms x 1/2 sine wave in 3 directions.
Notes
• Unless otherwise stated, characteristics (specifications) shown in the above table are based on the rated
operating temperature and voltage condition.
• External by-pass capacitor is recommended.
T E L : + 4 4 1 6 3 5 5 2 8 5 2 0 FA X : + 4 4 1 6 3 5 5 2 8 4 4 3
EPSON [ EPSON COMPANY ]
