Photodiode
EPD-1300-5-0.2
Preliminary
6/21/2007
rev. 06/07
Type
Technology
InGaAs/InP
Case
Wavelength
Infrared
Planar
5 mm plastic lens
Description
InGaAs-Photodiode mounted in standard 5 mm
package without standoff . High spectral
sensitivity in the infrared range (NIR, SWIR).
9,15
5,75 - 0,3
1
Anode
Note: Special packages with standoff available on request
Applications
1,5
0,6 - 0,2
Ø 5
Optical communications,
safety equipment, light barriers
± 1,0
36,5
Miscellaneous Parameters
Tamb = 25°C, unless otherwise specified
Parameter
Test сonditions
Symbol
Value
Unit
Active area
A
0.032
7.4
mm²
%/K
°C
TC(ID)
Tamb
Tstg
Temperature coefficient
Operating temperature range
Storage temperature range
-40 to +85
-40 to +100
°C
Optical and Electrical Characteristics
Tamb = 25°C, unless otherwise specified
Parameter
Test conditions
IF = 10 mA
Symbol
Min
Typ
1.7
Max
Unit
VF
VR
Forward voltage
Breakdown voltage2)
V
V
IR = 10 µA
VR = 0 V
5
Sensitivity range at 10 %
800
1750
200
nm
nm
A/W
pA
Gꢁ
λ
ꢀλ0,5
Sλ
VR = 0 V
Spectral bandwidth at 50 %
680
0.9
30
5
Responsivity at 1300 nm1)
Dark current
VR = 0 V
VR = 5 V
ID
VR = 10 mV
RSH
NEP
D*
Shunt resistance
3
4.0x10-15
4.5x1012
11
W/ Hz
cm Hz W −1
pF
Noise equivalent power
Specific detectivity
Junction capacitance
λ =1300 nm
λ = 1300 nm
VR = 0 V
CJ
VR = 0 V
Ee = 1mW/cm²
IPh
Photo current at 1300 nm*
0.95
µA
1) measured on bare chip
2) for information only
Note: All measurements carried out with EPIGAP equipment
Labeling
RD (typ.) [Gꢁ]
Quantity
Type
Lot N°
EPD-1300-5-0.2
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
1 of 2
Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545
EPIGAP [ EPIGAP OPTOELECTRONIC GMBH ]
