epc3xx
Symbol
Parameter
Conditions/Comments
Values
Typ.
Units
Min.
Max.
tr
Rise/Fall Time
all types
photo current measured at
ns
RL = 50 Ω , λ = 850 nm, IP = 200 μA
VR = +1.5 V
300
150
VR = +5.0 V
VR = +10.0 V
90
CO
Capacitance
per diode VR = +5V, ƒ = 100kHz, E = 0
5
pF
W/√Hz
dB
epc300
epc310
epc320
epc330
10
20
40
80
NEP Noise Equivalent Power per diode VR = 5 V
4.2x10-15
6.0x10-15
8.4x10-15
1.2x10-14
1.7x10-14
50
epc300
epc310
epc320
epc330
CT
Cross Talk Suppression epc320
epc330
between individual photo diodes on the same chip,
if the voltage difference Vdiff is <100mV between
individual diodes (cathodes)
© 2011 ESPROS Photonics Corporation
Characteristics subject to change without notice
3
Datasheet epc3xx - V2.3
www.espros.ch