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EPC300 参数 Datasheet PDF下载

EPC300图片预览
型号: EPC300
PDF下载: 下载PDF文件 查看货源
内容描述: 高灵敏度的光电二极管 [High sensitive photodiodes]
分类和应用: 光电二极管光电二极管
文件页数/大小: 10 页 / 378 K
品牌: EPC [ ESPROS PHOTONICS CORP ]
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epc3xx  
Absolute Maximum Ratings (Notes 1, 2)  
Recommended Operating Conditions  
Reverse Voltage VR  
30.0 V  
Min.  
1.5  
-40  
+5  
Max.  
20.0  
+85  
Units  
V
Breakdown Voltage between Diodes  
Storage Temperature Range (TS)  
Lead Temperature solder, 4 sec. (TL)  
10.0 V  
Reverse Voltage (VR)  
-40°C to +85°C  
+260°C  
Operating Temperature (TA)  
Relative Humidity (non-condensing)  
°C  
+95  
%
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Recommended operating conditions  
indicate conditions for which the device is intended to be functional, but do not guarantee specific performance limits. For guaranteed specific-  
ations and test conditions, see Electrical Characteristics.  
Note 2: This device is a highly sensitive CMOS photodiodes with an ESD rating of JEDEC HBM class 2 (<2kV). Handling and assembly of  
this device should only be done at ESD protected workstations.  
Note 3: Unless otherwise stated, measuring parameters are VR = 5.0 V, -40°C < TA < +85°C, RL = 50 Ω  
Note 4: Unless otherwise stated, measurement data apply for individual photo diodes in multi diode chips  
General Characteristics (Notes 3, 4)  
Symbol  
Parameter  
Conditions/Comments  
Values  
Typ.  
Units  
Min.  
Max.  
λS max. Wavelength  
max. Sensitivity  
850  
nm  
nm  
λ
Sλ  
η
Wavelength Range  
Spectral Sensitivity  
S = 20 % of Smax  
400  
1030  
λ = 850nm, VR = 5V, Ie = 1 mW/cm2, type epc300  
λ = 850nm, VR = 5V, Ie = 1 mW/cm2, type epc300  
0.6  
90  
A/W  
%
Quantum Efficiency  
Half angle  
φ
±60  
300  
0.38  
-3.0  
°
VO  
Open Circuit Voltage  
Ie = 0.5 mW/cm2  
mV  
%/K  
mV/K  
TCV Temperature Coefficient of ISC  
TCO Temperature Coefficient of VO  
Type Specific Characteristics @ +25°C (all diodes of the array connected in parallel)  
Symbol  
Parameter  
Conditions/Comments  
Values  
Typ.  
2.5  
5
Units  
Min.  
Max.  
IP  
Photo Current  
per diode VR = 5V, Ie = 1 mW/cm2,  
μA  
λ = 850 nm (NIR filter centered on 850nm)  
epc300  
epc310  
epc320  
epc330  
10  
20  
40  
IR  
per diode VR = 5 V, TA= 20°C  
20  
250  
500  
pA  
μA  
Dark Current *  
epc300  
40  
epc310  
80  
1000  
2000  
4000  
epc320  
160  
320  
2.5  
5
epc330  
per diode Ie = 1 mW/cm2  
ISC  
Short-circuit Current  
epc300  
epc310  
10  
epc320  
20  
epc330  
40  
* selected types available upon request  
© 2011 ESPROS Photonics Corporation  
Characteristics subject to change without notice  
2
Datasheet epc3xx - V2.3  
www.espros.ch  
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