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ISP26DP06NMS

OptiMOS™ P-channel small signal MOSFETs 60V in SOT-223 package is the new technology targeted for consumer applications. The main advantage of a P-channel small signal device is the reduction of design complexity in medium and low power applications. Enabling fast switching, avalanche ruggedness and an easy interface to microcontroller unit (MCU), also featuring a very low on-resistance RDS(on). It is available in logic level.
暂无信息
0 INFINEON

NSR10T406MX2WT5G

1.0 A, 40 V, Schottky Barrier Diode
测试二极管
0 ONSEMI

GRM55RR71H474KA01#

民用设备,工业设备,移动设备,植入式以外的医疗器械设备 [GHTF A/B/C],汽车[信息娱乐 / 舒适设备]
医疗医疗器械
0 MURATA

GJM0335C2A7R0WB01#

民用设备,工业设备,移动设备,植入式以外的医疗器械设备 [GHTF A/B/C],汽车[信息娱乐 / 舒适设备]
医疗医疗器械
0 MURATA

GRM0335C1H6R9DA01#

民用设备,工业设备,移动设备,植入式以外的医疗器械设备 [GHTF A/B/C],汽车[信息娱乐 / 舒适设备]
医疗医疗器械
0 MURATA

GRM188R71E163MA01#

民用设备,工业设备,移动设备,植入式以外的医疗器械设备 [GHTF A/B/C],汽车[信息娱乐 / 舒适设备]
医疗医疗器械
0 MURATA

FDB86366-F085

N 沟道,PowerTrench® MOSFET,80V,110A,3.6mΩ
暂无信息
1 ONSEMI

GRM0332C2A240GA01#

民用设备,工业设备,移动设备,植入式以外的医疗器械设备 [GHTF A/B/C],汽车[信息娱乐 / 舒适设备]
医疗医疗器械
0 MURATA

IAUS300N08S5N014T

The IAUS300N08S5N014T is a 1.4 mΩ, topside-cooled 80 V MOSFET coming in the TOLT package with Infineon’s leading OptiMOS™-5 technology. Next to others the device is designed for 48V applications. Alongside the 48V auxiliary applications, the device is primarily used in the the DC-DC converter and the main battery switch.
暂无信息
0 INFINEON

FS75R12KE3

EconoPACK™2 1200 V, 75 A 六单元 IGBT 模块,采用第三代 IGBT 和NTC 温度检测
局域网双极性晶体管
0 INFINEON

GCG1555C1H8R4CA01#

汽车[动力总成 / 安全设备],汽车[信息娱乐 / 舒适设备],植入式以外的医疗器械设备 [GHTF A/B/C]
医疗医疗器械
0 MURATA

GQM2195C2E9R2DB12#

民用设备,工业设备,移动设备,植入式以外的医疗器械设备 [GHTF A/B/C],汽车[信息娱乐 / 舒适设备]
医疗医疗器械
0 MURATA

R6524KNJ

R6524KNJ是具有低导通电阻和高开关速度的功率MOSFET。适合开关应用。
开关
0 ROHM

GCM21B5C2E392JX01#

汽车[动力总成 / 安全设备],汽车[信息娱乐 / 舒适设备],植入式以外的医疗器械设备 [GHTF A/B/C]
医疗医疗器械
1 MURATA

SCS304AJ

可降低开关损耗,可高速开关。
开关
1 ROHM