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EM48BM1684LBB-75FE 参数 Datasheet PDF下载

EM48BM1684LBB-75FE图片预览
型号: EM48BM1684LBB-75FE
PDF下载: 下载PDF文件 查看货源
内容描述: [DRAM]
分类和应用: 动态存储器
文件页数/大小: 22 页 / 224 K
品牌: EOREX [ EOREX CORPORATION ]
 浏览型号EM48BM1684LBB-75FE的Datasheet PDF文件第6页浏览型号EM48BM1684LBB-75FE的Datasheet PDF文件第7页浏览型号EM48BM1684LBB-75FE的Datasheet PDF文件第8页浏览型号EM48BM1684LBB-75FE的Datasheet PDF文件第9页浏览型号EM48BM1684LBB-75FE的Datasheet PDF文件第11页浏览型号EM48BM1684LBB-75FE的Datasheet PDF文件第12页浏览型号EM48BM1684LBB-75FE的Datasheet PDF文件第13页浏览型号EM48BM1684LBB-75FE的Datasheet PDF文件第14页  
EM48BM1684LBB  
AC Operating Test Characteristics (Continued)  
(VDD=1.7 ~ 1.95V, TA=-25°C ~85°C)  
-6  
-7.5  
Symbol  
Parameter  
Units  
Min.  
Max.  
100k  
Min.  
Max.  
ACTIVE to ACTIVE Command  
Period (Note 6)  
tRC  
90  
90  
ns  
ns  
ACTIVE to PRECHARGE  
Command Period (Note 6)  
PRECHARGE to ACTIVE  
Command Period (Note 6)  
ACTIVE to READ/WRITE Delay  
Time (Note 6)  
tRAS  
tRP  
42  
18  
18  
12  
1
45  
22.5  
22.5  
15  
100k  
ns  
tRCD  
tRRD  
tCCD  
ns  
ACTIVE(one) to ACTIVE(another)  
Command (Note 6)  
ns  
READ/WRITE Command to  
READ/WRITE Command  
1
CLK  
Date-in to PRECHARGE  
Command  
tDPL  
tBDL  
2
1
2
1
CLK  
CLK  
Date-in to BURST Stop Command  
Data-out to High  
tROH  
Impedance from  
CL=3  
3
3
CLK  
PRECHARGE Command  
tREF  
tDAL  
Refresh Time (8,192 cycle)  
Data-in to ACTIVE command  
64  
64  
ms  
ns  
33  
37.5  
* All voltages referenced to VSS.  
Note 6: These parameters account for the number of clock cycles and depend on the operating frequency of  
the clock, as follows:  
The number of clock cycles = Specified value of timing/clock period (Count Fractions as a whole  
number)  
Recommended Power On and Initialization  
The following power on and initialization sequence guarantees the device is preconditioned to each user’s  
specific needs. (Like a conventional DRAM) During power on, all VDD and VDDQ pins must be built up  
simultaneously to the specified voltage when the input signals are held in the “NOP” state. The power on  
voltage must not exceed VDD+0.3V on any of the input pins or VDD supplies. (CLK signal started at same time)  
After power on, an initial pause of 200 µs is required followed by a precharge of all banks using the precharge  
command.  
To prevent data contention on the DQ bus during power on, it is required that the DQM and CKE pins be held  
high during the initial pause period. Once all banks have been precharged, the Mode Register Set Command  
must be issued to initialize the Mode Register. A minimum of eight Auto Refresh cycles (CBR) are also required,  
and these may be done before or after programming the Mode Register.  
Nov. 2010  
www.eorex.com  
10/22