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EM48AM1684VTG-6F 参数 Datasheet PDF下载

EM48AM1684VTG-6F图片预览
型号: EM48AM1684VTG-6F
PDF下载: 下载PDF文件 查看货源
内容描述: 256MB ( 4mA的?? 4Bankà ?? 16 )同步DRAM [256Mb (4M×4Bank×16) Synchronous DRAM]
分类和应用: 动态存储器
文件页数/大小: 20 页 / 480 K
品牌: EOREX [ EOREX CORPORATION ]
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EM48AM1684VTG  
Recommended Power On and Initialization  
The following power on and initialization sequence guarantees the device is preconditioned to each users  
specific needs. (Like a conventional DRAM) During power on, all VDD and VDDQ pins must be built up  
simultaneously to the specified voltage when the input signals are held in the “NOP” state. The power on  
voltage must not exceed VDD + 0.3V on any of the input pins or VDD supplies. (CLK signal started at same  
time)  
After power on, an initial pause of 200 µs is required followed by a precharge of all banks using the  
precharge command.  
To prevent data contention on the DQ bus during power on, it is required that the DQM and CKE pins be held  
high during the initial pause period. Once all banks have been precharged, the Mode Register Set Command  
must be issued to initialize the Mode Register. A minimum of eight Auto Refresh cycles (CBR) are also  
required, and these may be done before or after programming the Mode Register.  
Jun. 2010  
11/20  
www.eorex.com