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EM484M3284LBA-7FE 参数 Datasheet PDF下载

EM484M3284LBA-7FE图片预览
型号: EM484M3284LBA-7FE
PDF下载: 下载PDF文件 查看货源
内容描述: 512MB ( 4M × 4Bank × 32 )同步DRAM [512Mb (4M】4Bank】32) Synchronous DRAM]
分类和应用: 动态存储器
文件页数/大小: 20 页 / 1146 K
品牌: EOREX [ EOREX CORPORATION ]
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eorex  
EM48AM3284LBA  
Output Drive Strength  
The normal drive strength got all outputs is specified to be LV-CMOS. By setting EMRS specific parameter  
on A6 and A5, driving capability of data output drivers is selected.  
Partial Array Self Refresh  
In EMRS setting A0~A2 ,memory array size to be refreshed during self-refresh operation is programmable in  
order to reduce power. Data outside the defined area will not be retained during self-refresh.  
Auto Temperature Compensated Self Refresh (ATCSR)  
In EMRS setting A9=0 , With the built-in temperature sensor, the internal self refresh frequency is controlled  
autonomously..  
1. Command Truth Table  
CKE  
n-1  
BA0,  
BA1  
A11,  
A9~A10  
Command  
Symbol  
/CS /RAS /CAS /WE  
A10  
n
X
X
X
X
X
X
X
X
X
X
X
Ignore Command  
No Operation  
Burst Stop  
DESL  
NOP  
H
H
H
H
H
H
H
H
H
H
H
H
L
L
L
L
L
L
L
L
L
L
X
H
H
H
H
H
L
X
H
H
L
X
H
L
X
X
X
V
V
V
V
V
V
X
L
X
X
X
L
X
X
X
V
V
V
V
V
X
X
V
BSTH  
READ  
Read  
H
H
L
Read with Auto Pre-charge READA  
Write WRIT  
Write with Auto Pre-charge WRITA  
L
H
L
L
H
H
H
H
L
H
H
L
H
V
L
Bank Activate  
ACT  
PRE  
PALL  
MRS  
L
Pre-charge Select Bank  
Pre-charge All Banks  
Mode Register Set  
L
L
L
H
L
L
L
H = High level, L = Low level, X = High or Low level (Don't care), V = Valid data input  
Jul. 2007  
www.eorex.com  
14/20