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EM482M3244LBA-7FE 参数 Datasheet PDF下载

EM482M3244LBA-7FE图片预览
型号: EM482M3244LBA-7FE
PDF下载: 下载PDF文件 查看货源
内容描述: 256MB ( 2M × 4Bank × 32 )同步DRAM [256Mb (2M】4Bank】32) Synchronous DRAM]
分类和应用: 动态存储器
文件页数/大小: 19 页 / 1101 K
品牌: EOREX [ EOREX CORPORATION ]
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eorex  
EM488M3244LBA  
Extended Mode Register Set ( EMRS )  
The Extended mode register is written by asserting low on /CS, /RAS, /CAS, /WE and high on BA1 ( The  
SDRAM should be in all bank precharge with CKE already prior to writing into the extended mode register. )  
The state of address pins A0-A10 and BA1 in the same cycle as /CS, /RAS, /CAS, and /WE going low is  
written in the extended mode register. The mode register contents can be changed using the same  
command and clock cycle requirements during operation as long as all banks are in the idle state.  
BA1 BA0 A11/A10  
A9  
0
A8  
0
A7  
0
A6  
0
A5  
A4  
0
A3  
0
A2  
A1  
A0  
1
0
0
DS  
0
Driver Strength  
1/2 Strength  
1/4 Strength  
A5  
0
1
BA1  
MRS  
0
1
Normal  
EMRS  
Output Drive Strength  
The normal drive strength got all outputs is specified to be LV-CMOS. By setting EMRS specific parameter  
on only A5 , driving capability of data output drivers is selected. It’s different with other mobile SDRAM DS  
setting( other mobile use A6/A5 ).  
Jul. 2006  
www.eorex.com  
12/19