eorex
EM48BM1684LBA
Output Drive Strength
The normal drive strength got all outputs is specified to be LV-CMOS. By setting EMRS specific parameter
on A6 and A5, driving capability of data output drivers is selected.
Temperature Compensated Self-Refresh
TCSR controlled by programming in the extended mode register (EMRS). The memory automatically
changes the self-refresh cycle by temperature fluctuations.
Partial Array Self Refresh
In EMRS setting ,memory array size to be refreshed during self-refresh operation is programmable in order
to reduce power. Data outside the defined area will not be retained during self-refresh.
1. Command Truth Table
CKE
n-1
BA0,
BA1
A11,
A9~A10
Command
Symbol
/CS /RAS /CAS /WE
A10
n
X
X
X
X
X
X
X
X
X
X
X
Ignore Command
No Operation
Burst Stop
DESL
NOP
H
H
H
H
H
H
H
H
H
H
H
H
L
L
L
L
L
L
L
L
L
L
X
H
H
H
H
H
L
X
H
H
L
X
H
L
X
X
X
V
V
V
V
V
V
X
L
X
X
X
L
X
X
X
V
V
V
V
V
X
X
V
BSTH
READ
Read
H
H
L
Read with Auto Pre-charge READA
Write WRIT
Write with Auto Pre-charge WRITA
L
H
L
L
H
H
H
H
L
H
H
L
H
V
L
Bank Activate
ACT
PRE
PALL
MRS
L
Pre-charge Select Bank
Pre-charge All Banks
Mode Register Set
L
L
L
H
L
L
L
H = High level, L = Low level, X = High or Low level (Don't care), V = Valid data input
Jul. 2006
www.eorex.com
13/19